Xie Bin, Chen Wei, Hao Junjie, Wu Dan, Yu Xingjian, Chen Yanhua, Hu Run, Wang Kai, Luo Xiaobing
Opt Express. 2016 Dec 26;24(26):A1560-A1570. doi: 10.1364/OE.24.0A1560.
White light-emitting diodes (WLEDs) with quantum dots (QDs) and phosphor have attracted tremendous attentions due to their excellent color rendering ability. In the packaging process, QDs layer and phosphor-silicone layer tend to be separated to reduce the reabsorption losses, and to maintain the stability of QDs surface ligands. This study investigated the packaging sequence between QDs and phosphor on the optical and thermal performances of WLEDs. The output optical power and PL spectra were measured and analyzed, and the temperature fields were simulated and validated experimentally by infrared thermal imager. It was found that when driven by 60 mA, the QDs-on-phosphor type WLEDs achieved luminous efficiency (LE) of 110 lm/W, with color rendering index (CRI) of Ra = 92 and R9 = 80, while the phosphor-on-QDs type WLEDs demonstrated lower LE of 68 lm/W, with Ra = 57 and R9 = 24. Moreover, the QDs-on-phosphor type WLEDs generated less heat than that of another, consequently the highest temperature in the QDs-on-phosphor type was lower than another, and the temperature difference can reach 12.3°C. Therefore, in terms of packaging sequence, the QDs-on-phosphor type is an optimal packaging architecture for higher optical efficiency, better color rendering ability and lower device temperature.
带有量子点(QDs)和荧光粉的白光发光二极管(WLED)因其出色的显色能力而备受关注。在封装过程中,量子点层和荧光粉 - 硅胶层往往会分离,以减少再吸收损失,并保持量子点表面配体的稳定性。本研究调查了量子点和荧光粉的封装顺序对WLED光学和热性能的影响。测量并分析了输出光功率和PL光谱,并通过红外热成像仪对温度场进行了模拟和实验验证。结果发现,当以60 mA驱动时,荧光粉上量子点型WLED的发光效率(LE)达到110 lm/W,显色指数(CRI)为Ra = 92,R9 = 80,而量子点上荧光粉型WLED的发光效率较低,为68 lm/W,Ra = 57,R9 = 24。此外,荧光粉上量子点型WLED产生的热量比另一种少,因此荧光粉上量子点型的最高温度低于另一种,温差可达12.3°C。因此,就封装顺序而言,荧光粉上量子点型是一种具有更高光学效率、更好显色能力和更低器件温度的最佳封装结构。