富锡低带隙钙钛矿基平面异质结光伏器件中的高开路电压。
High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics.
机构信息
Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
出版信息
Adv Mater. 2017 Jan;29(2). doi: 10.1002/adma.201604744. Epub 2016 Nov 7.
Low-bandgap CH NH (Pb Sn )I (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm V s ) intrinsic carrier mobilities.
制备了具有低带隙 CH NH (Pb Sn )I（0 ≤ x ≤ 1）混合钙钛矿的高表面覆盖率和优异光电性能的器件（例如，约 1.5-1.1 eV）。在平面异质结结构中，报道了最先进的光伏 (PV) 性能，与带隙相比，能量损失较小（<450 meV），并且具有较高的本征载流子迁移率（>100 cm V s ），接近 10%的功率转换效率。
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