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在泡沫镍上电沉积超薄 CoO 纳米片阵列用于高性能超级电容器

Galvanic displacement assembly of ultrathin CoO nanosheet arrays on nickel foam for a high-performance supercapacitor.

机构信息

Key Laboratory of Artificial Structure and Quantum Control, Ministry of Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China.

出版信息

Nanotechnology. 2017 Mar 10;28(10):105604. doi: 10.1088/1361-6528/aa583b. Epub 2017 Jan 10.

Abstract

High-performance supercapacitors are very desirable for many portable electronic devices, electric vehicles and high-power electronic devices. Herein, a facile and binder-free synthesis method, galvanic displacement of the precursor followed by heat treatment, is used to fabricate ultrathin CoO nanosheet arrays on nickel foam substrate. When used as a supercapacitor electrode the prepared CoO on nickel foam exhibits a maximum specific capacitance of 1095 F g at a current density of 1 A g and good cycling stability of 71% retention after 2000 cycling tests. This excellent electrochemical performance can be ascribed to the high specific surface area of each CoO nanosheet that comprises numerous nanoparticles.

摘要

用于许多便携式电子设备、电动汽车和高功率电子设备的高性能超级电容器是非常理想的。在此,采用了一种简便且无粘结剂的合成方法,即前驱体的电置换随后进行热处理,在泡沫镍基底上制备了超薄 CoO 纳米片阵列。将制备的 CoO 泡沫镍用作超级电容器电极时,在 1 A g 的电流密度下具有 1095 F g 的最大比电容,经过 2000 次循环测试后,保留率为 71%,具有良好的循环稳定性。这种优异的电化学性能可归因于组成众多纳米颗粒的每个 CoO 纳米片的高比表面积。

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