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通过直接电子写入工艺在 VO 纳米线中进行纳米级工程。

Nanoscale Engineering in VO Nanowires via Direct Electron Writing Process.

机构信息

Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China.

Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States.

出版信息

Nano Lett. 2017 Feb 8;17(2):851-855. doi: 10.1021/acs.nanolett.6b04118. Epub 2017 Jan 17.

DOI:10.1021/acs.nanolett.6b04118
PMID:28080071
Abstract

Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO) has its metal-insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO. This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.

摘要

在纳米尺度上控制功能材料的相转变不仅具有广泛的科学意义,而且对于可再生能源、信息存储、换能器、传感器等领域的实际应用也很重要。作为一种模型功能材料,二氧化钒(VO)通常在大约 68°C 的急剧温度下发生金属-绝缘体转变(MIT)。在这里,我们报告了聚焦电子束可以直接将纳米区域的转变温度降低到室温,而无需对 VO 进行预图案化。这个新过程被称为辐照辅助 MIT(R-MIT)。电子束辐照形成了一个独特的渐变 MIT 区,其大小是光束尺寸的几倍,在这个区域中,可以在扩展的温度范围内实现温度相关的相转变。渐变的转变区可以精确控制金属/绝缘相的比例。这种直接的电子写入技术可以为在基于功能材料的器件中精确设计各种电子性能的纳米域提供机会。

相似文献

1
Nanoscale Engineering in VO Nanowires via Direct Electron Writing Process.通过直接电子写入工艺在 VO 纳米线中进行纳米级工程。
Nano Lett. 2017 Feb 8;17(2):851-855. doi: 10.1021/acs.nanolett.6b04118. Epub 2017 Jan 17.
2
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Nanoscale Control of Oxygen Defects and Metal-Insulator Transition in Epitaxial Vanadium Dioxides.外延二氧化钒中氧缺陷与金属-绝缘体转变的纳米级控制
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Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.衬底介导的应变效应在热加热和电场对二氧化钒纳米梁金属-绝缘体转变作用中的影响
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Nano Lett. 2017 Mar 8;17(3):1762-1767. doi: 10.1021/acs.nanolett.6b05067. Epub 2017 Feb 23.

引用本文的文献

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Photo-induced non-volatile VO phase transition for neuromorphic ultraviolet sensors.用于神经形态紫外传感器的光致非易失 VO 相转变。
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Flexible and reconfigurable radio frequency electronics realized by high-throughput screen printing of vanadium dioxide switches.
通过二氧化钒开关的高通量丝网印刷实现的柔性可重构射频电子器件。
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Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives.二氧化钒纳米结构与器件的最新进展:制备、性质、应用及展望
Nanomaterials (Basel). 2021 Jan 28;11(2):338. doi: 10.3390/nano11020338.
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Nanoscale-femtosecond dielectric response of Mott insulators captured by two-color near-field ultrafast electron microscopy.双色近场超快电子显微镜捕捉到的莫特绝缘体的纳米级飞秒介电响应。
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