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BaNiGe中的一级相变以及价电子数对ThCrSi结构类型畸变的影响。

First-Order Phase Transition in BaNiGe and the Influence of the Valence Electron Count on Distortion of the ThCrSi Structure Type.

作者信息

Hlukhyy Viktor, Trots Dmytro, Fässler Thomas F

机构信息

Department of Chemistry, Technische Universität München , Lichtenbergstrasse 4, 85747 Garching, Germany.

Hamburger Synchrotronstrahlungslabor, DESY , Notkestrasse 85, 22607 Hamburg, Germany.

出版信息

Inorg Chem. 2017 Feb 6;56(3):1173-1185. doi: 10.1021/acs.inorgchem.6b02190. Epub 2017 Jan 13.

DOI:10.1021/acs.inorgchem.6b02190
PMID:28085271
Abstract

Structural instability has a strong influence on the understanding of superconductivity in iron-containing 122 phases. Similar to the 122 iron-based high-temperature superconductors, the intermetallic compound BaNiGe undergoes an orthorhombic-to-tetragonal structural phase transition. The compound was prepared by arc-melting mixtures of the elements under an argon atmosphere. Single crystals were obtained by a special heat treatment in a welded tantalum ampule. The crystal structure of the compound was investigated by powder and single-crystal X-ray diffraction. Differential thermal analysis of BaNiGe showed a reversible phase transition at ca. 480 °C. In situ temperature-dependent synchrotron powder X-ray diffraction studies revealed that below 480 °C the crystal structure of BaNiGe is orthorhombic [own structure type, space group Pnma, a = 8.3852(4) Å, b = 11.3174(8) Å, and c = 4.2902(9) Å at 30 °C] and the high-temperature phase above 510 °C belongs to the tetragonal ThCrSi-type structure [space group I4/mmm, a = 4.2664(1) Å, and c = 11.2537(3) Å at 510 °C]. The reversible first-order low-temperature ↔ high-temperature phase transition around 480 °C is associated with distortion of the [NiGe] layer of low-temperature modification. The anisotropy of thermal expansion of the unit cell in BaNiGe was analyzed. The crystal chemistry and chemical bonding are discussed in terms of linear muffin-tin orbital band structure calculations and a topological analysis using the electron localization function. In related compounds, the level of distortion of the uncollapsed tetragonal ThCrSi-type structure depends on the valence electron count (VEC).

摘要

结构不稳定性对含122相铁的超导电性理解有很大影响。与122型铁基高温超导体类似,金属间化合物BaNiGe经历正交晶系到四方晶系的结构相变。该化合物通过在氩气气氛下电弧熔炼元素混合物制备。通过在焊接钽安瓿中进行特殊热处理获得单晶。通过粉末和单晶X射线衍射研究该化合物的晶体结构。BaNiGe的差示热分析表明在约480℃有可逆相变。原位变温同步辐射粉末X射线衍射研究表明,在480℃以下,BaNiGe的晶体结构为正交晶系[自身结构类型,空间群Pnma,30℃时a = 8.3852(4) Å,b = 11.3174(8) Å,c = 4.2902(9) Å],高于510℃的高温相属于四方ThCrSi型结构[空间群I4/mmm,510℃时a = 4.2664(1) Å,c = 11.2537(3) Å]。480℃左右可逆的一级低温↔高温相变与低温变体的[NiGe]层畸变有关。分析了BaNiGe晶胞热膨胀的各向异性。根据线性 muffin-tin轨道能带结构计算和使用电子定域函数的拓扑分析讨论了晶体化学和化学键。在相关化合物中,未塌陷的四方ThCrSi型结构的畸变程度取决于价电子数(VEC)。

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