Chen Lung-Chien, Lin Wun-Wei, Liu Te-Yu
Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec.3, Chung-Hsiao E. Rd, Taipei, 106, Taiwan.
Nanoscale Res Lett. 2017 Dec;12(1):35. doi: 10.1186/s11671-016-1817-7. Epub 2017 Jan 13.
This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.
本研究调查了通过两步转移工艺形成的氮化镓（GaN）基薄膜发光二极管（TF-LED）的光电特性，该工艺包括湿法蚀刻和退火后处理。在两步转移工艺中，使用KrF激光通过激光剥离（LLO）方法将GaN发光二极管从蓝宝石衬底上剥离，然后转移到陶瓷衬底上。在光辅助化学蚀刻和100°C下1分钟的光增强退火后处理之后，在GaN基TF-LED的表面上形成了Ga-K纳米棒。结果，经过湿法蚀刻和退火后处理的GaN基TF-LED的光输出功率比未经过这些处理的发光二极管高出72%以上。
