Kern Christian, Kadic Muamer, Wegener Martin
Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76128 Karlsruhe, Germany.
Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 76021 Karlsruhe, Germany.
Phys Rev Lett. 2017 Jan 6;118(1):016601. doi: 10.1103/PhysRevLett.118.016601. Epub 2017 Jan 4.
Effectively inverting the sign of material parameters is a striking possibility arising from the concept of metamaterials. Here, we show that the electrical properties of a p-type semiconductor can be mimicked by a metamaterial solely made of an n-type semiconductor. By fabricating and characterizing three-dimensional simple-cubic microlattices composed of interlocked hollow semiconducting tori, we demonstrate that sign and magnitude of the effective metamaterial Hall coefficient can be adjusted via a tori separation parameter-in agreement with previous theoretical and numerical predictions.
有效地反转材料参数的符号是超材料概念所带来的一种引人注目的可能性。在此，我们表明仅由n型半导体制成的超材料可以模拟p型半导体的电学性质。通过制造和表征由互锁的中空半导体环面组成的三维简单立方微晶格，我们证明了超材料有效霍尔系数的符号和大小可以通过环面分离参数来调节——这与先前的理论和数值预测一致。
