Kim Subeen, Choi Sungho, Lee Kanghyeon, Yang Gene Jaehyoung, Lee Sun Sook, Kim Yongseon
Department of Materials Science and Engineering, Inha University, Incheon, 22212, Republic of Korea.
Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea.
Phys Chem Chem Phys. 2017 Feb 1;19(5):4104-4113. doi: 10.1039/c6cp08114b.
Introducing additives is a general method of performance improvement in materials engineering, but details regarding whether the additive is doped in the host crystal or present as a secondary phase are usually examined from experimental experience, with a systematic theoretical prediction lacking, which sometimes causes controversy on the role of additives. In this study, the dopability of Ti in crystalline LiCoO (LCO) is investigated by a first-principles simulation method, and the doping limit is quantitatively calculated. The probability of Ti substitution for Co is examined and related to point-defect formation in LCO as a function of the general experimental variables of temperature and gas-phase partial pressures, enabling practical use of the theoretical model for real experiments. It was found that Ti substitution for Co, accompanied by the formation of a Li vacancy, is the most probable Ti doping form in LCO, but the doping limit is very low and most Ti would segregate into secondary phases. The theoretical prediction showed good agreement with the experimental results. Based on theoretical predictions, particles having LCO cores and Ti-rich shells are obtained from a simple sol-gel route followed by one-step firing without additional surface treatment. The high-voltage cyclability of LCO is greatly improved. The method demonstrated in this study may be a useful tool for screening suitable coating or doping elements for various material systems and provide a guide for designing simple spontaneous coating processes, as in this study.
引入添加剂是材料工程中提高性能的常用方法,但关于添加剂是掺杂在主体晶体中还是以第二相形式存在的细节,通常是根据实验经验来研究的,缺乏系统的理论预测,这有时会导致对添加剂作用的争议。在本研究中,通过第一性原理模拟方法研究了Ti在晶体LiCoO(LCO)中的掺杂能力,并定量计算了掺杂极限。研究了Ti替代Co的概率,并将其与LCO中的点缺陷形成与温度和气相分压等一般实验变量的函数关系联系起来,从而使理论模型能够实际应用于真实实验。结果发现,Ti替代Co并伴随Li空位的形成是LCO中最可能的Ti掺杂形式,但掺杂极限非常低,大多数Ti会偏析到第二相中。理论预测与实验结果显示出良好的一致性。基于理论预测,通过简单的溶胶 - 凝胶路线,随后一步烧制,无需额外的表面处理,获得了具有LCO核和富Ti壳的颗粒。LCO的高压循环性能得到了极大改善。本研究中展示的方法可能是筛选各种材料体系合适涂层或掺杂元素的有用工具,并为设计简单的自发涂层工艺提供指导,如本研究中所示。