Zuo Zhiyuan, Ding Jianxu, Zhao Ying, Du Songjie, Li Yongfu, Zhan Xiaoyuan, Cui Hongzhi
Advanced Research Center for Optics, Shandong University , Jinan 250100, China.
State Key Laboratory of Crystal Materials, Shandong University , Jinan 250100, China.
J Phys Chem Lett. 2017 Feb 2;8(3):684-689. doi: 10.1021/acs.jpclett.6b02812. Epub 2017 Jan 24.
Hybrid organic-inorganic lead halide perovskites have attracted significant attention due to their impressive optoelectronic properties. MAPbX (MA= CHNH, X= Cl, Br or I), the most popular member of this family, has been recognized as an important next-generation optoelectronic materials contender, and remarkable progress has been achieved in both thin films and single crystals. However, the lack of optimizations in energy harvest, transportation, carrier extraction, and process compatibility is hindering their future development. In this study, a triangle prism MAPbBr single crystal exposing (100) and (110) crystallographic planes was successfully synthesized, and the optoelectronic performances of these two lattice planes were systematically explored by employing a planar metal-semiconductor-metal (MSM) device. Compared to the device fabricated on the (100) plane, a 153.33% enhancement of responsivity was achieved under 10 μW irradiation and 10 V bias on the (110) plane. Finally, possible mechanism for such an enhancement was discussed based on the different defect migration behaviors of (100) and (110) planes.
有机-无机杂化铅卤化物钙钛矿因其令人印象深刻的光电特性而备受关注。MAPbX（MA = CHNH，X = Cl、Br或I）是该家族中最常见的成员，已被公认为下一代重要的光电材料竞争者，并且在薄膜和单晶方面都取得了显著进展。然而，在能量收集、传输、载流子提取和工艺兼容性方面缺乏优化，阻碍了它们未来的发展。在本研究中，成功合成了暴露（100）和（110）晶面的三角棱柱MAPbBr单晶，并通过采用平面金属-半导体-金属（MSM）器件系统地探索了这两个晶格平面的光电性能。与在（100）平面上制造的器件相比，在（110）平面上10 μW辐照和10 V偏压下实现了153.33%的响应率增强。最后，基于（100）和（110）平面不同的缺陷迁移行为，讨论了这种增强的可能机制。
