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具有面外结构调整的混合卤化物 MAPbX(X = I、Br 和 Cl)薄膜中的阴离子依赖极化和压电发电。

Anion-Dependent Polarization and Piezoelectric Power Generation in Hybrid Halide MAPbX (X = I, Br, and Cl) Thin Films with Out-of-Plane Structural Adjustments.

机构信息

Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea.

Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada.

出版信息

Adv Sci (Weinh). 2023 Feb;10(4):e2204462. doi: 10.1002/advs.202204462. Epub 2022 Dec 1.

DOI:10.1002/advs.202204462
PMID:36453567
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9896056/
Abstract

Anion-dependent differences in the electromechanical energy harvesting capability of perovskite halides have not been experimentally demonstrated thus far. Herein, anion-dependent piezoelectricity and bending-driven power generation in high-quality methylammonium lead halide MAPbX (X = I, Br, and Cl) thin films are explored; additionally, anisotropic in situ strain is imposed to improve energy harvesting under tensile bending. After applying the maximum in situ strain of -0.73% for all the halide thin films, the MAPbI thin-film harvester exhibited a peak voltage/current of ≈23.1 V/≈1703 nA as the best values, whereas MAPbBr and MAPbCl demonstrated ≈5.6 V/≈176 nA and ≈3.3 V/≈141 nA, respectively, under identical bending conditions. Apart from apparent ferroelectricity of tetragonal MAPbI , origin of the piezoelectricity in both cubic MAPbBr and MAPbCl is explored as being related to organic-inorganic hydrogen bonding, lattice distortion, and ionic migration, with experimental supports of effective piezoelectric coefficient and grain boundary potential. Conclusively, piezoelectricity of the cubic halides is assumed to be due to their soft polarity modes and relatively low elastic modulus with vacancies contributing to space-charge polarization. In the case of ferroelectric MAPbI , the distortion of PbI octahedra and atomic displacement within each octahedron are quantitatively estimated.

摘要

迄今为止,尚未在实验中证明卤化铅钙钛矿的机电能量收集能力依赖于阴离子。在此,我们探索了高质量甲胺铅卤化物 MAPbX(X = I、Br 和 Cl)薄膜中依赖于阴离子的压电性和弯曲驱动发电;此外,还施加各向异性的原位应变以改善拉伸弯曲下的能量收集。在对所有卤化物薄膜施加最大原位应变-0.73%后,MAPbI 薄膜收集器表现出最佳值≈23.1 V/≈1703 nA 的峰值电压/电流,而 MAPbBr 和 MAPbCl 在相同弯曲条件下分别表现出≈5.6 V/≈176 nA 和≈3.3 V/≈141 nA。除了四方相 MAPbI 的明显铁电性外,我们还探索了立方相 MAPbBr 和 MAPbCl 中压电性的起源,认为与有机-无机氢键、晶格畸变和离子迁移有关,实验支持有效压电系数和晶界势。总之,假设立方卤化物的压电性是由于它们的软极性模式和相对较低的弹性模量,以及空位对空间电荷极化的贡献。在铁电 MAPbI 的情况下,定量估计了 PbI 八面体的变形和每个八面体内部的原子位移。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f756/9896056/062aadc69552/ADVS-10-2204462-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f756/9896056/1183f269b9be/ADVS-10-2204462-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f756/9896056/edf424bdf151/ADVS-10-2204462-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f756/9896056/c7ad08c3b374/ADVS-10-2204462-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f756/9896056/062aadc69552/ADVS-10-2204462-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f756/9896056/1183f269b9be/ADVS-10-2204462-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f756/9896056/edf424bdf151/ADVS-10-2204462-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f756/9896056/c7ad08c3b374/ADVS-10-2204462-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f756/9896056/062aadc69552/ADVS-10-2204462-g001.jpg

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本文引用的文献

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