Zhao Xiaofeng, Li Baozeng, Wen Dianzhong
School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.
Sensors (Basel). 2017 Jan 22;17(1):212. doi: 10.3390/s17010212.
This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HSMST) chips were designed and fabricated on a p-type <100> orientation double-side polished silicon wafer with high resistivity. In addition, a collector load resistor ( R L ) was integrated on the chip, and the resistor converted the collector current ( I C ) to a collector output voltage ( V out ). When I B = 8.0 mA, V DD = 10.0 V, and R L = 4.1 kΩ, the magnetic sensitivity ( S V ) at room temperature and temperature coefficient ( α C ) of the collector current for HSMST were 181 mV/T and -0.11%/°C, respectively. The experimental results show that the magnetic sensitivity and temperature characteristics of the proposed transistor can be obviously improved by the use of a nc-Si:H/c-Si heterojunction as an emitter junction.
本文介绍了一种以纳米晶硅氢化非晶硅/晶体硅（nc-Si:H/c-Si）异质结作为发射极结的磁敏晶体管。通过采用微机电系统（MEMS）技术和化学气相沉积（CVD）方法，在具有高电阻率的p型<100>取向双面抛光硅片上设计并制造了nc-Si:H/c-Si异质结硅磁敏晶体管（HSMST）芯片。此外，在芯片上集成了一个集电极负载电阻（RL），该电阻将集电极电流（IC）转换为集电极输出电压（Vout）。当IB = 8.0 mA、VDD = 10.0 V且RL = 4.1 kΩ时，HSMST在室温下的磁灵敏度（SV）和集电极电流的温度系数（αC）分别为181 mV/T和-0.11%/°C。实验结果表明，通过使用nc-Si:H/c-Si异质结作为发射极结，可以显著提高所提出晶体管的磁灵敏度和温度特性。
