School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
Angew Chem Int Ed Engl. 2017 Mar 13;56(12):3226-3231. doi: 10.1002/anie.201700449. Epub 2017 Feb 7.
The atomic layer deposition (ALD) of iron sulfide (FeS ) is reported for the first time. The deposition process employs bis(N,N'-di-tert-butylacetamidinato)iron(II) and H S as the reactants and produces fairly pure, smooth, and well-crystallized FeS thin films following an ideal self-limiting ALD growth behavior. The FeS films can be uniformly and conformally deposited into deep narrow trenches with aspect ratios as high as 10:1, which highlights the broad applicability of this ALD process for engineering the surface of complex 3D nanostructures in general. Highly uniform nanoscale FeS coatings on porous γ-Al O powder were also prepared. This compound shows excellent catalytic activity and selectivity in the hydrogenation of azo compounds under mild reaction conditions, demonstrating the promise of ALD FeS as a catalyst for organic reactions.
首次报道了硫化亚铁(FeS)的原子层沉积(ALD)。该沉积过程采用双(N,N'-二-叔丁基乙二酰胺基)二铁(II)和 H2S 作为反应物,并在理想的自限制 ALD 生长行为下生成相当纯净、光滑且结晶良好的 FeS 薄膜。FeS 薄膜可以均匀且共形地沉积到高深宽比高达 10:1 的深窄沟槽中,这突出了该 ALD 工艺在一般工程复杂 3D 纳米结构表面方面的广泛适用性。还在多孔 γ-Al2O3 粉末上制备了高度均匀的纳米级 FeS 涂层。该化合物在温和的反应条件下对偶氮化合物的加氢反应表现出优异的催化活性和选择性,表明 ALD FeS 作为有机反应催化剂具有广阔的应用前景。