School of Advanced Materials, Shenzhen Graduate School, Peking University , Shenzhen 518055, China.
Nano Lett. 2015 Oct 14;15(10):6689-95. doi: 10.1021/acs.nanolett.5b02508. Epub 2015 Aug 31.
Atomic layer deposition (ALD) of cobalt sulfide (Co9S8) is reported. The deposition process uses bis(N,N'-diisopropylacetamidinato)cobalt(II) and H2S as the reactants and is able to produce high-quality Co9S8 films with an ideal layer-by-layer ALD growth behavior. The Co9S8 films can also be conformally deposited into deep narrow trenches with aspect ratio of 10:1, which demonstrates the high promise of this ALD process for conformally coating Co9S8 on high-aspect-ratio 3D nanostructures. As Co9S8 is a highly promising electrochemical active material for energy devices, we further explore its electrochemical performance by depositing Co9S8 on porous nickel foams for supercapacitor electrodes. Benefited from the merits of ALD for making high-quality uniform thin films, the ALD-prepared electrodes exhibit remarkable electrochemical performance, with high specific capacitance, great rate performance, and long-term cyclibility, which highlights the broad and promising applications of this ALD process for energy-related electrochemical devices, as well as for fabricating complex 3D nanodevices in general.
报道了硫化钴（Co9S8）的原子层沉积（ALD）。该沉积过程使用双（N，N'-二异丙基乙酰胺基）钴（II）和 H2S 作为反应物，并能够以理想的逐层 ALD 生长行为生产高质量的 Co9S8 薄膜。Co9S8 薄膜还可以共形地沉积到深窄沟槽中，深宽比为 10:1，这表明该 ALD 工艺在高纵横比 3D 纳米结构上共形涂覆 Co9S8 方面具有很高的应用前景。由于 Co9S8 是一种用于能源设备的极具前景的电化学活性材料，我们通过在多孔镍泡沫上沉积 Co9S8 进一步探索了其电化学性能，作为超级电容器电极。得益于 ALD 制备高质量均匀薄膜的优点，ALD 制备的电极表现出显著的电化学性能，具有高比电容、优异的倍率性能和长期循环稳定性，这突出了该 ALD 工艺在能源相关电化学器件以及一般复杂 3D 纳米器件制造方面的广泛而有前途的应用。
