State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, P. R. China.
ACS Appl Mater Interfaces. 2017 Mar 1;9(8):7259-7264. doi: 10.1021/acsami.6b14541. Epub 2017 Feb 15.
Metal-organic framework (MOF) thin films are important in the application of sensors and devices. However, the application of MOF thin films in organic field effect transistors (OFETs) is still a challenge to date. Here, we first use the MOF thin film prepared by a liquid-phase epitaxial (LPE) approach (also called SURMOFs) to modify the SiO dielectric layer in the OFETs. After the semiconductive polymer of PTB7-Th (poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b:4,5-b']dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]) was coated on MOF/SiO and two electrodes on the semiconducting film were deposited sequentially, MOF-based OFETs were fabricated successfully. By controlling the LPE cycles of SURMOF HKUST-1 (also named Cu(BTC), BTC = 1,3,5-benzenetricarboxylate), the performance of the HKUST-1/SiO-based OFETs showed high charge mobility and low threshold voltage. This first report on the application of MOF thin film in OFETs will offer an effective approach for designing a new kind of materials for the OFET application.
金属-有机骨架（MOF）薄膜在传感器和器件的应用中非常重要。然而，MOF 薄膜在有机场效应晶体管（OFET）中的应用至今仍是一个挑战。在这里，我们首次使用液相外延（LPE）方法制备的 MOF 薄膜（也称为 SURMOFs）来修饰 OFET 中的 SiO 介电层。在将半导体聚合物 PTB7-Th（聚[4,8-双（5-（2-乙基己基）噻吩-2-基）苯并[1,2-b：4,5-b']二噻吩-3-氟噻吩[3,4-b]噻吩-2-羧酸酯]）涂覆在 MOF/SiO 上之后，我们在半导体薄膜上依次沉积两个电极，成功制备了基于 MOF 的 OFET。通过控制 SURMOF HKUST-1（也称为 Cu（BTC），BTC = 1,3,5-苯三甲酸）的 LPE 循环次数，HKUST-1/SiO 基 OFET 的性能表现出了较高的电荷迁移率和较低的阈值电压。这是关于 MOF 薄膜在 OFET 中应用的首次报道，为设计用于 OFET 应用的新型材料提供了一种有效的方法。
