Ohara Hiroaki, Yamamoto Shunsuke, Kuzuhara Daiki, Koganezawa Tomoyuki, Oikawa Hidetoshi, Mitsuishi Masaya
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
Faculty of Science and Engineering, Iwate University, 4-3-5 Ueda, Morioka, Iwate 020-8551, Japan.
ACS Appl Mater Interfaces. 2020 Nov 11;12(45):50784-50792. doi: 10.1021/acsami.0c13016. Epub 2020 Nov 2.
We demonstrate growth control of Cu-based metal-organic framework (MOF) (HKUST-1) thin films assembled by the layer-by-layer technique on polymer films. The crystallinity and crystal face of MOF thin films were found to be controlled by reaction sites in polymer films such as hydroxy groups (the (100) crystal face), carbonyl groups (the (111) crystal face), and amide groups (the (100) crystal face). The HKUST-1 film growth amount is highly correlated with the polar component of the surface free energy, indicating that polymer sites, which afford hydrogen and coordination bonding, are important for the initial adsorption of Cu complexes. We also demonstrated a resistive switching device application using an HKUST-1 thin film on the poly(vinyl alcohol) dip-coated film at 40 deposition cycles, which suggests that the HKUST-1 thin film serves as a resistive switching layer with good film formation capability.
我们展示了通过逐层技术在聚合物薄膜上组装的铜基金属有机框架（MOF）（HKUST-1）薄膜的生长控制。发现MOF薄膜的结晶度和晶面受聚合物薄膜中的反应位点控制，如羟基（（100）晶面）、羰基（（111）晶面）和酰胺基（（100）晶面）。HKUST-1薄膜的生长量与表面自由能的极性成分高度相关，这表明提供氢键和配位键的聚合物位点对铜配合物的初始吸附很重要。我们还展示了一种电阻开关器件应用，该应用使用在40个沉积循环下的聚乙烯醇浸涂膜上的HKUST-1薄膜，这表明HKUST-1薄膜作为具有良好成膜能力的电阻开关层。
