1,2-乙二硫醇处理高亮度的 AgInS/ZnS 量子点发光二极管。
1,2-Ethanedithiol Treatment for AgInS/ZnS Quantum Dot Light-Emitting Diodes with High Brightness.
机构信息
College of Material Science and Engineering, Qingdao University of Science and Technology , Qingdao 266042, China.
Department of Chemistry and Physics, Louisiana State University , Shreveport, Louisiana 71115, United States.
出版信息
ACS Appl Mater Interfaces. 2017 Mar 8;9(9):8187-8193. doi: 10.1021/acsami.6b16238. Epub 2017 Feb 21.
The surface organic ligands of the quantum dots (QDs) play important roles in the performance of QD electronic devices. Here, we fabricated low toxic AgInS/ZnS QDs light-emitting diodes (QD-LEDs) and greatly enhanced the device efficiency through surface ligand exchange treatments. The oleic acid-capped QDs were replaced with a shorter ligand 1,2-ethanedithiol, which was proved by the Fourier transform infrared spectrum measurement. The treated QD films became more compact with higher film mobility and shorter film photoluminescence lifetime. The more conductive QD films fabricated LEDs showed an external quantum efficiency over 1.52%.
量子点 (QD) 的表面有机配体在 QD 电子器件的性能中起着重要作用。在这里，我们通过表面配体交换处理制造了低毒性的 AgInS/ZnS QD 发光二极管 (QD-LED)，并大大提高了器件效率。通过傅里叶变换红外光谱测量证明，油酸封端的 QD 被具有更短配体 1,2-乙二硫醇的取代。处理后的 QD 薄膜变得更加致密，具有更高的薄膜迁移率和更短的薄膜光致发光寿命。更具导电性的 QD 薄膜制造的 LED 显示出超过 1.52%的外量子效率。
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