• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

1,2 - 乙二硫醇浓度对量子点发光二极管性能提升的影响

Effects of 1,2-ethanedithiol concentration on performance improvement of quantum-dot LEDs.

作者信息

Nguyen Huu Tuan, Ryu Shin Young, Duong Anh Tuan, Lee Soonil

机构信息

Phenikaa Research and Technology Institute (PRATI), A&A Green Phoenix Group 167 Hoang Ngan Hanoi 10000 Viet Nam

Faculty of Electrical and Electronic Engineering, Phenikaa Institute for Advanced Study (PIAS), Phenikaa University Yen Nghia, Ha-Dong District Hanoi 10000 Viet Nam.

出版信息

RSC Adv. 2019 Nov 25;9(66):38464-38468. doi: 10.1039/c9ra08411h.

DOI:10.1039/c9ra08411h
PMID:35540207
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9075991/
Abstract

We report systematic efficiency variations of green-emitting CdSe@ZnS quantum-dot (QD) LEDs (QLEDs) in response to treatments with 1,2-ethanedithiol (EDT) solutions at various concentrations. The main effect of EDT treatment on a QD layer spin-coated onto a ZnO layer was vacuum-level shift due to dipole moments on the surface of the QD layer and at the interface between QD and ZnO layers. Competing contributions of these dipole moments were responsible for changes in energy level configurations and, accordingly, electron and hole barriers that resulted in discrepancies in electron- and hole-current variations. QLED efficiency was best when treated with an EDT solution of 4 mM, attributable to the largest increase in the hole- to electron current ratio. The maximum luminous yield of the 4 mM EDT-treated QLED was 5.43 cd A, which is 10 times higher than that of an untreated device. Furthermore, the luminous yield of this treated device remained as high as 2.56 cd A at a luminance of 500 cd m.

摘要

我们报告了绿色发光的CdSe@ZnS量子点发光二极管(QLED)在不同浓度的1,2 - 乙二硫醇(EDT)溶液处理下的系统效率变化。EDT处理对旋涂在ZnO层上的量子点层的主要影响是由于量子点层表面以及量子点与ZnO层界面处的偶极矩导致的真空能级移动。这些偶极矩的相互竞争作用导致了能级配置的变化,进而导致电子和空穴势垒的变化,最终造成电子电流和空穴电流变化的差异。当用4 mM的EDT溶液处理时,QLED效率最佳,这归因于空穴与电子电流比的最大增加。经4 mM EDT处理的QLED的最大发光效率为5.43 cd/A,比未处理的器件高10倍。此外,该处理器件在500 cd/m²的亮度下,发光效率仍高达2.56 cd/A。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a72f/9075991/8aed6050db2a/c9ra08411h-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a72f/9075991/c0e8155f3689/c9ra08411h-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a72f/9075991/fc313118b04e/c9ra08411h-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a72f/9075991/fcf650aa70f4/c9ra08411h-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a72f/9075991/8aed6050db2a/c9ra08411h-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a72f/9075991/c0e8155f3689/c9ra08411h-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a72f/9075991/fc313118b04e/c9ra08411h-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a72f/9075991/fcf650aa70f4/c9ra08411h-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a72f/9075991/8aed6050db2a/c9ra08411h-f4.jpg

相似文献

1
Effects of 1,2-ethanedithiol concentration on performance improvement of quantum-dot LEDs.1,2 - 乙二硫醇浓度对量子点发光二极管性能提升的影响
RSC Adv. 2019 Nov 25;9(66):38464-38468. doi: 10.1039/c9ra08411h.
2
Impact of 1,2-ethanedithiol treatment on luminescence and charge-transport characteristics in colloidal quantum-dot LEDs.1,2-乙二硫醇处理对胶体量子点 LED 发光和电荷输运特性的影响。
Nanotechnology. 2019 Dec 13;30(50):505202. doi: 10.1088/1361-6528/ab42dd. Epub 2019 Sep 10.
3
Application of solution-processed metal oxide layers as charge transport layers for CdSe/ZnS quantum-dot LEDs.溶液处理金属氧化物层在 CdSe/ZnS 量子点 LED 中作为电荷传输层的应用。
Nanotechnology. 2013 Mar 22;24(11):115201. doi: 10.1088/0957-4484/24/11/115201. Epub 2013 Feb 28.
4
Suppression of non-radiative recombination to improve performance of colloidal quantum-dot LEDs with a CsCO solution treatment.通过CsCO溶液处理抑制非辐射复合以提高胶体量子点发光二极管的性能。
Nanotechnology. 2021 Jan 27;32(15):155202. doi: 10.1088/1361-6528/abd780.
5
Over 40 cd/A efficient green quantum dot electroluminescent device comprising uniquely large-sized quantum dots.包含独特大尺寸量子点的 40 cd/A 以上高效绿光量子点电致发光器件。
ACS Nano. 2014 May 27;8(5):4893-901. doi: 10.1021/nn500852g. Epub 2014 Apr 25.
6
High Performance Top-Emission Quantum Dot Light-Emitting Diodes with Mg-Doped ZnO Nanoparticles Used as an Electron Transport Layer.采用掺镁氧化锌纳米颗粒作为电子传输层的高性能顶部发射量子点发光二极管。
J Nanosci Nanotechnol. 2021 Jul 1;21(7):3747-3752. doi: 10.1166/jnn.2021.19230.
7
Full-color capable light-emitting diodes based on solution-processed quantum dot layer stacking.基于溶液处理量子点层层堆积的全彩发光二极管。
Nanoscale. 2018 Apr 5;10(14):6300-6305. doi: 10.1039/c8nr00307f.
8
Stable ZnS Electron Transport Layer for High-Performance Inverted Cadmium-Free Quantum Dot Light-Emitting Diodes.用于高性能倒置无镉量子点发光二极管的稳定 ZnS 电子传输层。
ACS Appl Mater Interfaces. 2022 Dec 21;14(50):55925-55932. doi: 10.1021/acsami.2c14711. Epub 2022 Dec 9.
9
Well-type thick-shell quantum dots combined with double hole transport layers device structure assisted realization of high-performance quantum dot light-emitting diodes.阱型厚壳量子点与双空穴传输层器件结构相结合助力实现高性能量子点发光二极管。
Opt Express. 2024 Jun 3;32(12):20618-20628. doi: 10.1364/OE.523932.
10
Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Solution-Processable Highly Conductive Spinel Structure CuCoO Hole Injection Layer.使用可溶液加工的高导电性尖晶石结构CuCoO空穴注入层提高量子点发光二极管的性能。
Materials (Basel). 2023 Jan 20;16(3):972. doi: 10.3390/ma16030972.

引用本文的文献

1
Flexible CdSe/ZnS Quantum-Dot Light-Emitting Diodes with Higher Efficiency than Rigid Devices.具有比刚性器件更高效率的柔性CdSe/ZnS量子点发光二极管。
Micromachines (Basel). 2022 Feb 7;13(2):269. doi: 10.3390/mi13020269.

本文引用的文献

1
Impact of 1,2-ethanedithiol treatment on luminescence and charge-transport characteristics in colloidal quantum-dot LEDs.1,2-乙二硫醇处理对胶体量子点 LED 发光和电荷输运特性的影响。
Nanotechnology. 2019 Dec 13;30(50):505202. doi: 10.1088/1361-6528/ab42dd. Epub 2019 Sep 10.
2
Bi-inorganic-ligand coordinated colloidal quantum dot ink.双无机配体配位的胶体量子点墨水
Chem Commun (Camb). 2019 Aug 7;55(64):9483-9486. doi: 10.1039/c9cc04157e.
3
Enhancing the photocatalytic properties of PbS QD solids: the ligand exchange approach.
增强 PbS QD 固溶体的光催化性能:配体交换法。
Nanoscale. 2019 Jan 23;11(4):1978-1987. doi: 10.1039/c8nr07760f.
4
High-efficiency colloidal quantum dot infrared light-emitting diodes via engineering at the supra-nanocrystalline level.通过超纳米晶级工程实现的高效胶体量子点红外发光二极管。
Nat Nanotechnol. 2019 Jan;14(1):72-79. doi: 10.1038/s41565-018-0312-y. Epub 2018 Dec 3.
5
Droop-Free Colloidal Quantum Dot Light-Emitting Diodes.无弛豫胶体量子点发光二极管。
Nano Lett. 2018 Oct 10;18(10):6645-6653. doi: 10.1021/acs.nanolett.8b03457. Epub 2018 Sep 27.
6
High-efficiency, deep blue ZnCdS/CdZnS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18.高效、深蓝光 ZnCdS/CdZnS/ZnS 量子点发光器件,EQE 超过 18。
Nanoscale. 2018 Mar 28;10(12):5650-5657. doi: 10.1039/c7nr09175c. Epub 2018 Mar 12.
7
1,2-Ethanedithiol Treatment for AgInS/ZnS Quantum Dot Light-Emitting Diodes with High Brightness.1,2-乙二硫醇处理高亮度的 AgInS/ZnS 量子点发光二极管。
ACS Appl Mater Interfaces. 2017 Mar 8;9(9):8187-8193. doi: 10.1021/acsami.6b16238. Epub 2017 Feb 21.
8
Multifunctional Dendrimer Ligands for High-Efficiency, Solution-Processed Quantum Dot Light-Emitting Diodes.多功能树枝状配体用于高效、溶液处理的量子点发光二极管。
ACS Nano. 2017 Jan 24;11(1):684-692. doi: 10.1021/acsnano.6b07028. Epub 2016 Dec 19.
9
Improved electroluminescence of quantum dot light-emitting diodes enabled by a partial ligand exchange with benzenethiol.通过与苯硫酚的部分配体交换实现量子点发光二极管的电致发光增强。
Nanotechnology. 2016 Jun 17;27(24):245203. doi: 10.1088/0957-4484/27/24/245203. Epub 2016 May 9.
10
Solution-processed, high-performance light-emitting diodes based on quantum dots.基于量子点的溶液处理高性能发光二极管。
Nature. 2014 Nov 6;515(7525):96-9. doi: 10.1038/nature13829. Epub 2014 Oct 29.