1,2 - 乙二硫醇浓度对量子点发光二极管性能提升的影响

Effects of 1,2-ethanedithiol concentration on performance improvement of quantum-dot LEDs.

作者信息

Nguyen Huu Tuan, Ryu Shin Young, Duong Anh Tuan, Lee Soonil

机构信息

Phenikaa Research and Technology Institute (PRATI), A&A Green Phoenix Group 167 Hoang Ngan Hanoi 10000 Viet Nam

Faculty of Electrical and Electronic Engineering, Phenikaa Institute for Advanced Study (PIAS), Phenikaa University Yen Nghia, Ha-Dong District Hanoi 10000 Viet Nam.

出版信息

RSC Adv. 2019 Nov 25;9(66):38464-38468. doi: 10.1039/c9ra08411h.

DOI:10.1039/c9ra08411h

PMID:35540207

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9075991/

Abstract

We report systematic efficiency variations of green-emitting CdSe@ZnS quantum-dot (QD) LEDs (QLEDs) in response to treatments with 1,2-ethanedithiol (EDT) solutions at various concentrations. The main effect of EDT treatment on a QD layer spin-coated onto a ZnO layer was vacuum-level shift due to dipole moments on the surface of the QD layer and at the interface between QD and ZnO layers. Competing contributions of these dipole moments were responsible for changes in energy level configurations and, accordingly, electron and hole barriers that resulted in discrepancies in electron- and hole-current variations. QLED efficiency was best when treated with an EDT solution of 4 mM, attributable to the largest increase in the hole- to electron current ratio. The maximum luminous yield of the 4 mM EDT-treated QLED was 5.43 cd A, which is 10 times higher than that of an untreated device. Furthermore, the luminous yield of this treated device remained as high as 2.56 cd A at a luminance of 500 cd m.

摘要

我们报告了绿色发光的CdSe@ZnS量子点发光二极管（QLED）在不同浓度的1,2 - 乙二硫醇（EDT）溶液处理下的系统效率变化。EDT处理对旋涂在ZnO层上的量子点层的主要影响是由于量子点层表面以及量子点与ZnO层界面处的偶极矩导致的真空能级移动。这些偶极矩的相互竞争作用导致了能级配置的变化，进而导致电子和空穴势垒的变化，最终造成电子电流和空穴电流变化的差异。当用4 mM的EDT溶液处理时，QLED效率最佳，这归因于空穴与电子电流比的最大增加。经4 mM EDT处理的QLED的最大发光效率为5.43 cd/A，比未处理的器件高10倍。此外，该处理器件在500 cd/m²的亮度下，发光效率仍高达2.56 cd/A。