Engmann Sebastian, Ro Hyun Wook, Herzing Andrew, Snyder Chad R, Richter Lee J, Geraghty Paul B, Jones David J
Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
School of Chemistry, Bio21 Institute, The University of Melbourne, 30 Flemington Road, Parkville, Victoria 3010, Australia.
J Mater Chem A Mater. 2016 Oct 28;4(40):15511-15521. doi: 10.1039/C6TA05056E. Epub 2016 Sep 15.
Solution-processable small molecule photovoltaics based on the novel molecular donor, benzodithiophene terthiophene rhodanine (BTR), recently have shown maximum power conversion efficiencies above 8 % for active layer thicknesses up to 400 nm, using post process solvent vapor annealing (SVA) with tetrahydrofuran (THF). Here we report an in-situ study on the morphology evolution during SVA using the moderate solvent THF and the good solvent chloroform (CF). The combination of real-time grazing incidence X-ray diffraction (GIXD) and grazing incidence small angle X-ray scattering (GISAXS) allows us to draw a complete picture of the evolution of crystallinity and phase purity during post process annealing. We find that the relative crystallinity compared to the as-cast films is only modestly affected by SVA and solvent choice. However, both the phase purity and the characteristic domain sizes within the film vary significantly and are controlled by the solvent quality as well as exposure time. Using THF, films with high phase purity and desirable characteristic length scales of about 30 nm can be achieved, while the use of CF rapidly leads to excessive film coarsening and less preferable domain sizes on the order of 60 nm, too large for optimized charge separation.
基于新型分子给体苯并二噻吩三噻吩若丹宁(BTR)的可溶液加工小分子光伏器件,最近通过使用四氢呋喃(THF)进行后处理溶剂气相退火(SVA),在活性层厚度达400 nm时展现出了超过8%的最大功率转换效率。在此,我们报告了一项关于使用中等溶解性溶剂THF和良溶剂氯仿(CF)进行SVA过程中形态演变的原位研究。实时掠入射X射线衍射(GIXD)和掠入射小角X射线散射(GISAXS)相结合,使我们能够全面了解后处理退火过程中结晶度和相纯度的演变情况。我们发现,与铸膜相比,相对结晶度仅受到SVA和溶剂选择的适度影响。然而,膜内的相纯度和特征畴尺寸均有显著变化,且受溶剂质量和暴露时间的控制。使用THF时,可实现具有高相纯度且特征长度尺度约为30 nm的理想薄膜,而使用CF则会迅速导致薄膜过度粗化,形成约60 nm的不太理想的畴尺寸,该尺寸对于优化电荷分离而言过大。