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新型 III-V 族半导体材料潜在释放的离子态 As(III)、As(V)、In(III)和 Ga(III)的生态毒性评估。

Ecotoxicity assessment of ionic As(III), As(V), In(III) and Ga(III) species potentially released from novel III-V semiconductor materials.

机构信息

Department of Chemical and Environmental Engineering, University of Arizona, P.O. Box 210011, Tucson, AZ 85704, USA.

Department of Chemical and Environmental Engineering, University of Arizona, P.O. Box 210011, Tucson, AZ 85704, USA.

出版信息

Ecotoxicol Environ Saf. 2017 Jun;140:30-36. doi: 10.1016/j.ecoenv.2017.02.029. Epub 2017 Feb 27.

Abstract

III-V materials such as indium arsenide (InAs) and gallium arsenide (GaAs) are increasingly used in electronic and photovoltaic devices. The extensive application of these materials may lead to release of III-V ionic species during semiconductor manufacturing or disposal of decommissioned devices into the environment. Although arsenic is recognized as an important contaminant due to its high toxicity, there is a lack of information about the toxic effects of indium and gallium ions. In this study, acute toxicity of As(III), As(V), In(III) and Ga(III) species was evaluated using two microbial assays testing for methanogenic activity and O uptake, as well as two bioassays targeting aquatic organisms, including the marine bacterium Aliivibrio fischeri (bioluminescence inhibition) and the crustacean Daphnia magna (mortality). The most noteworthy finding was that the toxicity is mostly impacted by the element tested. Secondarily, the toxicity of these species also depended on the bioassay target. In(III) and Ga(III) were not or only mildly toxic in the experiments. D. magna was the most sensitive organism for In(III) and Ga(III) with 50% lethal concentrations of 0.5 and 3.4mM, respectively. On the other hand, As(III) and As(V) caused clear inhibitory effects, particularly in the methanogenic toxicity bioassay. The 50% inhibitory concentrations of both arsenic species towards methanogens were about 0.02mM, which is lower than the regulated maximum allowable daily effluent discharge concentration (2.09mg/L or 0.03mM) for facilities manufacturing electronic components in the US. Overall, the results indicate that the ecotoxicity of In(III) and Ga(III) is much lower than that of the As species tested. This finding is important in filling the knowledge gap regarding the ecotoxicology of In and Ga.

摘要

III-V 材料,如砷化铟(InAs)和砷化镓(GaAs),越来越多地用于电子和光伏器件。这些材料的广泛应用可能会导致在半导体制造过程中释放出 III-V 离子物种,或者将退役设备处置到环境中。尽管砷因其高毒性而被认为是一种重要的污染物,但关于铟和镓离子的毒性影响的信息却很少。在这项研究中,使用两种微生物测定法(测试产甲烷活性和 O 摄取)以及两种针对水生生物的生物测定法(包括海洋细菌 Aliivibrio fischeri(发光抑制)和甲壳纲动物大型蚤(死亡率))评估了 As(III)、As(V)、In(III)和 Ga(III)物种的急性毒性。最值得注意的发现是,毒性主要受测试元素的影响。其次,这些物种的毒性也取决于生物测定法的靶标。在实验中,In(III)和 Ga(III)要么没有毒性,要么只有轻微毒性。D. magna 对 In(III)和 Ga(III)最敏感,其 50%致死浓度分别为 0.5 和 3.4mM。另一方面,As(III)和 As(V)导致了明显的抑制作用,特别是在产甲烷毒性生物测定法中。这两种砷物种对产甲烷菌的 50%抑制浓度约为 0.02mM,低于美国电子元件制造设施规定的最大允许日排放浓度(2.09mg/L 或 0.03mM)。总体而言,结果表明 In(III)和 Ga(III)的生态毒性远低于测试的 As 物种。这一发现对于填补关于 In 和 Ga 的生态毒理学知识空白非常重要。

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