Wang Xiao, Zhang Guozhen, Xu Yang, Wu Hao, Liu Chang
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China.
Nanoscale Res Lett. 2017 Dec;12(1):145. doi: 10.1186/s11671-017-1924-0. Epub 2017 Feb 23.
InN nanocolumn arrays were grown on c-plane sapphire with and without anodic aluminum oxide (AAO) nanotemplates. The crystalline quality of InN nanocolumns was significantly improved by selective-area growth (SAG) using AAO templates, as verified by X-ray diffraction measurements. Then, InN nanocolumns were transferred onto p-type silicon substrates after etching off the AAO templates. Current-voltage characteristic of the transferred n-InN/p-Si heterojunctions shows on/off ratio as high as 4.65 × 10 at 2 V. This work offers a potential way to grow transferable devices with improving performances.
在有和没有阳极氧化铝（AAO）纳米模板的情况下，在c面蓝宝石上生长了氮化铟（InN）纳米柱阵列。通过使用AAO模板的选择性区域生长（SAG），氮化铟纳米柱的晶体质量得到了显著改善，这一点通过X射线衍射测量得到了验证。然后，在蚀刻掉AAO模板后，将氮化铟纳米柱转移到p型硅衬底上。转移后的n-InN/p-Si异质结的电流-电压特性在2V时显示出高达4.65×10的开/关比。这项工作为生长具有改进性能的可转移器件提供了一种潜在的方法。
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