Wang X, Zhang G Z, Xu Y, Gan X W, Chen C, Wang Z, Wang Y, Wang J L, Wang T, Wu H, Liu C
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China.
Nanoscale Res Lett. 2016 Dec;11(1):21. doi: 10.1186/s11671-016-1232-0. Epub 2016 Jan 13.
InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10(-9) A/cm(2) at 1 V is obtained. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while Schottky emission dominates at low fields. Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.
以Al2O3作为栅极氧化物制备了基于InN的金属 - 绝缘体 - 半导体（MIS）结构。随着Mg掺杂浓度的增加，InN薄膜的表面形貌得到改善。在高频下，测量的电容密度与实际值存在偏差，转折频率与串联电阻成反比。在1V时获得了1.35×10^(-9) A/cm²的超低漏电流密度。在高场下，Fowler - Nordheim隧穿是漏电流的主要机制，而在低场下肖特基发射起主导作用。电容密度随不同偏压而变化，表明基于InN的MIS结构可作为MIS场效应晶体管的潜在候选材料。
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