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一种基于壳聚糖/氧化石墨烯-多壁碳纳米管/聚苯胺的新型高性能超级电容器。

A Novel High-Performance Supercapacitor based on Chitosan/Graphene Oxide-MWCNT/Polyaniline.

作者信息

Ghasem Hosseini Mir, Shahryari Elham

机构信息

Department of Physical Chemistry, Electrochemistry Research Laboratory, University of Tabriz, Tabriz, Iran; Engineering Faculty, Department of Materials Science and Nanotechnology, Near East University, 99138 Nicosia, North Cyprus, Mersin 10, Turkey.

Department of Physical Chemistry, Electrochemistry Research Laboratory, University of Tabriz, Tabriz, Iran.

出版信息

J Colloid Interface Sci. 2017 Jun 15;496:371-381. doi: 10.1016/j.jcis.2017.02.027. Epub 2017 Feb 14.

Abstract

Chitosan/Graphene Oxide-MWCNT/polyaniline (CS/GM/PANI) ternary nanocomposite has been synthesized via in situ polymerization of aniline in the presence of CS/GM. The Morphology of nanocomposites was studied by Field emission scanning electron microscopy (FE-SEM), Fourier transform infrared (FT-IR) spectroscopy, as well as X-ray photoelectron spectroscopy (XPS). Furthermore, the supercapacitive behavior of the CS-based samples was investigated using cyclic voltammetry (CV), galvanostatic charge-discharge (CD) and electrochemical impedance spectroscopy (EIS) techniques in 0.5M NaSO. It is found that the CS/GM/PANI nanocomposite displays much higher specific capacitance along with better cycle stability than those of CS and CS/GM. The specific capacitance of 609.2Fg (48.5mFcm) was obtained for the CS/GM/PANI at a scan rate of 10mVs. In addition, the synthesized nanocomposite retained 96% of the initial capacitance after 500 cycles of charge-discharge at a current density of 5Ag. The improvement in the supercapacitive behavior of CS/GM/PANI may be attributed to the porous structure and pseudocapacitive mechanism of charge-storage.

摘要

壳聚糖/氧化石墨烯-多壁碳纳米管/聚苯胺(CS/GM/PANI)三元纳米复合材料是通过在CS/GM存在的情况下原位聚合苯胺合成的。通过场发射扫描电子显微镜(FE-SEM)、傅里叶变换红外(FT-IR)光谱以及X射线光电子能谱(XPS)研究了纳米复合材料的形态。此外,在0.5M NaSO中使用循环伏安法(CV)、恒电流充放电(CD)和电化学阻抗谱(EIS)技术研究了基于CS的样品的超级电容行为。结果发现,与CS和CS/GM相比,CS/GM/PANI纳米复合材料具有更高的比电容以及更好的循环稳定性。在扫描速率为10mVs时,CS/GM/PANI的比电容为609.2Fg(48.5mFcm)。此外,在5Ag的电流密度下进行500次充放电循环后,合成的纳米复合材料保留了初始电容的96%。CS/GM/PANI超级电容行为的改善可能归因于其多孔结构和赝电容电荷存储机制。

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