Park Seoung-Hwan, Ahn Doyeol, Park Chan-Yong
Opt Express. 2017 Feb 20;25(4):3143-3152. doi: 10.1364/OE.25.003143.
Intersubband absorption properties of lattice-matched BGaN/AlN quantum well (QW) structures grown on AlN substrate are theoretically investigated using an effective mass theory considering the nonparabolicity of the conduction band. These results are compared with those of GaN/AlN QW structures. The intersubband absorption coefficient of the BGaN/AlN QW structure is shown to be enhanced significantly, compared to that of the conventional GaN/AlN QW structure. This can be explained by the fact that the BGaN/AlN QW structure exhibits larger intersuband dipole moment and quasi-Fermi-level separation than the GaN/AlN QW structure, due to the increase in the carrier confinement by a larger internal field. We expect that the BGaN/AlN QW structure with a high absorption coefficient can be used for telecommunication applications at 1.55 µm under the lattice-matched condition, instead of the conventional GaN/AlN QW structure with the large strain.
利用考虑导带非抛物线性的有效质量理论，对在AlN衬底上生长的晶格匹配BGaN/AlN量子阱（QW）结构的子带间吸收特性进行了理论研究。将这些结果与GaN/AlN QW结构的结果进行了比较。结果表明，与传统的GaN/AlN QW结构相比，BGaN/AlN QW结构的子带间吸收系数显著增强。这可以通过以下事实来解释：由于更大的内场导致载流子限制增加，BGaN/AlN QW结构比GaN/AlN QW结构表现出更大的子带间偶极矩和准费米能级分离。我们预计，具有高吸收系数的BGaN/AlN QW结构在晶格匹配条件下可用于1.55 µm的电信应用，而不是具有大应变的传统GaN/AlN QW结构。
