Dan Ho Kim, Vinh Pham Tuan, Hien Nguyen Dinh
Optical Materials Research Group, Science and Technology Advanced Institute, Van Lang University Ho Chi Minh City Vietnam
Faculty of Applied Technology, School of Technology, Van Lang University Ho Chi Minh City Vietnam.
Nanoscale Adv. 2024 Oct 4;6(24):6253-64. doi: 10.1039/d4na00598h.
In this paper, the magneto-optical transport (MOT) properties of III-nitride Pöschl-Teller quantum well (QW) semiconductors, including AlN, GaN, and InN, resulting from the acoustic phonon interaction are thoroughly investigated and compared by applying the technique of operator projection. In particular, a comparison is made between the Pöschl-Teller QW results and the square QW ones. The findings demonstrate that the MOT properties of III-nitride QW semiconductors resulting from acoustic phonon scattering are strongly influenced by the quantum system (QS) temperature, applied magnetic field, and QW width. When the applied magnetic field and QS temperature increase, the absorbing FWHM in AlN, GaN, and InN increases; on the other hand, it diminishes when the QW's width increases. The absorbing FWHM in GaN is smaller and varies slower compared with AlN; inversely, it is larger and varies faster compared with InN. In other words, the absorbing FWHM in AlN is the largest and the smallest in InN. Compared to the square QW in AlN, GaN, and InN, the absorbing FWHMs in the Pöschl-Teller QW vary more quickly and have greater values. The absorbing FWHMs resulting from the acoustic phonon interaction in III-nitrides are strongly dependent on the nanostructure's geometric shape and parameters. Our findings provide useful information for the development of electronic devices.
在本文中，通过应用算符投影技术，对包括AlN、GaN和InN在内的III族氮化物普施尔 - 特勒量子阱（QW）半导体由于声学声子相互作用而产生的磁光输运（MOT）特性进行了深入研究和比较。特别地，对普施尔 - 特勒量子阱结果与方形量子阱结果进行了比较。研究结果表明，声学声子散射导致的III族氮化物量子阱半导体的MOT特性受到量子系统（QS）温度、外加磁场和量子阱宽度的强烈影响。当外加磁场和QS温度升高时，AlN、GaN和InN中的吸收半高宽增加；另一方面，当量子阱宽度增加时，吸收半高宽减小。与AlN相比，GaN中的吸收半高宽较小且变化较慢；相反，与InN相比，它较大且变化较快。换句话说，AlN中的吸收半高宽最大，InN中的最小。与AlN、GaN和InN中的方形量子阱相比，普施尔 - 特勒量子阱中的吸收半高宽变化更快且值更大。III族氮化物中声学声子相互作用导致的吸收半高宽强烈依赖于纳米结构的几何形状和参数。我们的研究结果为电子器件的开发提供了有用的信息。
