Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, South Korea.
Sci Rep. 2017 Mar 2;7:43561. doi: 10.1038/srep43561.
We demonstrated that a flat band voltage (V) shift could be controlled in TiN/(LaO or ZrO)/SiO stack structures. The V shift described in term of metal diffusion into the TiN film and silicate formation in the inserted (LaO or ZrO)/SiO interface layer. The metal doping and silicate formation confirmed by using transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) line profiling, respectively. The direct work function measurement technique allowed us to make direct estimate of a variety of flat band voltages (V). As a function of composition ratio of La or Zr to Ti in the region of a TiN/(LaO or ZrO)/SiO/Si stack, direct work function modulation driven by La and Zr doping was confirmed with the work functions obtained from the cutoff value of secondary electron emission by auger electron spectroscopy (AES). We also suggested an analytical method to determine the interface dipole via work function depth profiling.
我们证明，在 TiN/(LaO 或 ZrO)/SiO 堆叠结构中可以控制平带电压 (V) 漂移。V 漂移是通过金属扩散到 TiN 薄膜和插入的 (LaO 或 ZrO)/SiO 界面层中的硅酸盐形成来描述的。金属掺杂和硅酸盐形成分别通过透射电子显微镜 (TEM) 和能量色散光谱 (EDS) 线轮廓分析得到证实。直接功函数测量技术允许我们对各种平带电压 (V) 进行直接估计。作为 TiN/(LaO 或 ZrO)/SiO/Si 堆叠区域中 Ti 与 La 或 Zr 组成比的函数，通过使用俄歇电子能谱 (AES) 的二次电子发射截止值获得的功函数，证实了由 La 和 Zr 掺杂驱动的直接功函数调制。我们还提出了一种通过功函数深度轮廓分析确定界面偶极子的分析方法。
