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门控双层石墨烯中的谷滤波边缘态和量子谷霍尔效应。

Valley-filtered edge states and quantum valley Hall effect in gated bilayer graphene.

作者信息

Zhang Xu-Long, Xu Lei, Zhang Jun

机构信息

School of Physics Science and Technology, Xinjiang University, Urumqi 830046, People's Republic of China.

出版信息

J Phys Condens Matter. 2017 May 10;29(18):185502. doi: 10.1088/1361-648X/aa648a. Epub 2017 Mar 6.

Abstract

Electron edge states in gated bilayer graphene in the quantum valley Hall (QVH) effect regime can carry both charge and valley currents. We show that an interlayer potential splits the zero-energy level and opens a bulk gap, yielding counter-propagating edge modes with different valleys. A rich variety of valley current states can be obtained by tuning the applied boundary potential and lead to the QVH effect, as well as to the unbalanced QVH effect. A method to individually manipulate the edge states by the boundary potentials is proposed.

摘要

在量子谷霍尔(QVH)效应 regime 下的栅控双层石墨烯中的电子边缘态可以携带电荷和谷电流。我们表明,层间势分裂了零能量级并打开了体能隙,产生具有不同谷的反向传播边缘模式。通过调节施加的边界势可以获得丰富多样的谷电流态,从而导致 QVH 效应以及不平衡 QVH 效应。提出了一种通过边界势单独操纵边缘态的方法。

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