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并五苯薄膜的自限性生长。

Self-Limited Growth in Pentacene Thin Films.

机构信息

Institute of Solid State Physics, NAWI Graz, Graz University of Technology , Petersgasse 16, 8010 Graz, Austria.

Institute of Pharmaceutical Sciences, Department of Pharmaceutical Technology, University of Graz , Universitätsplatz 1, 8010 Graz, Austria.

出版信息

ACS Appl Mater Interfaces. 2017 Apr 5;9(13):11977-11984. doi: 10.1021/acsami.6b15907. Epub 2017 Mar 23.

Abstract

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

摘要

并五苯是研究最多的有机半导体材料之一。虽然在非常薄的薄膜中已经确定了许多薄膜形成的方面,但这项研究提供了对从亚稳态薄膜相到体相多晶型的转变的新见解。本研究重点研究了薄膜厚度范围为 20 至 300nm 的薄膜内并五苯的生长行为。通过采用各种 X 射线衍射方法,结合原子力显微镜的支持研究,观察到薄膜相的一种晶向,而发现了三种不同倾斜的体相取向。首先,体相晶体的 00L 平面与衬底表面平行生长;然而,发现了相对于衬底倾斜 0.75°的晶核,它们的比例明显占主导地位;第三,发现了不同的体相多晶型,其晶体倾斜 21°。通过在薄膜相晶体的晶面处成核来实现从薄膜相到体相的转变,从而导致薄膜相的自限制生长,并解释了在并五苯薄膜中观察到的厚度相关的相行为,表明在薄膜生长过程中,大量材料比以前认为的更早地存在于体相中。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3efd/5384045/26e2d645511b/am-2016-15907w_0001.jpg

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