Xu Guizhou, Hou Zhipeng, Wang Yue, Zhang Xiaoming, Zhang Hongwei, Liu EnKe, Xi Xuekui, Xu Feng, Wu Guangheng, Zhang Xi-Xiang, Wang Wenhong
School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China. State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
J Phys Condens Matter. 2017 May 17;29(19):195501. doi: 10.1088/1361-648X/aa6695. Epub 2017 Mar 14.
The recent discovery of ultrahigh mobility and large positive magnetoresistance in the topologically non-trivial half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surfaces with simple angle-related magnetotransport properties. In this work, through angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we aimed to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.
拓扑非平凡半赫斯勒半金属LuPtBi中最近发现的超高迁移率和大的正磁阻为研究奇异物理提供了一个独特的平台，并为器件应用提供了重要前景。作为一种面心立方结构的电子空穴补偿半金属，LuPtBi理论上呈现出六个对称排列的各向异性电子费米面口袋和两个近球形空穴口袋，这为通过简单的与角度相关的磁输运性质来探索费米面物理提供了机会。在这项工作中，通过与高场舒布尼科夫-德哈斯（SdH）量子振荡相结合的角度依赖横向磁阻测量，我们旨在绘制出高温低场区域中具有六个各向异性口袋的费米面，此外，还识别出低温下可能由磁场驱动的费米面变化。从由于朗道量子化导致的场致电子逸出的角度讨论了LuPtBi中费米面变化的原因。
