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DFT和TPD研究台阶在CO吸附于铜上的作用:Cu(4 1 0)与Cu(1 0 0)的对比

DFT and TPD study of the role of steps in the adsorption of CO on copper: Cu(4 1 0) versus Cu(1 0 0).

作者信息

Kokalj Anton, Makino Takamasa, Okada Michio

机构信息

Department of Physical and Organic Chemistry, Jožef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia.

出版信息

J Phys Condens Matter. 2017 May 17;29(19):194001. doi: 10.1088/1361-648X/aa66a3. Epub 2017 Mar 14.

DOI:10.1088/1361-648X/aa66a3
PMID:28291017
Abstract

Adsorption of carbon monoxide (CO) was studied on stepped Cu(4 1 0) by temperature programmed desorption (TPD) and density-functional-theory (DFT) calculations. For comparison, the adsorption of CO was characterized also on Cu(1 0 0) by DFT calculations. On Cu(4 1 0) TPD reveals two desorption peaks: a high temperature peak (∼210 K) is attributed to the desorption of CO from step-edge sites and low temperature peak (∼170 K) to desorption from terrace sites. According to DFT calculations, CO prefers to adsorb at step-edges of Cu(4 1 0), although the step-edge versus terrace site preference is rather small at low coverage of 1/16 ML, about 0.05 eV; the respective DFT predicted CO binding energies are  -0.89 and  -0.84 eV at the step-edge and terrace top sites, whereas the value calculated at top sites of Cu(1 0 0) is  -0.86 eV. Although this small step-edge over terrace site preference of 0.05 eV cannot explain the temperature difference of 40 K between the two TPD peaks, when the lateral intermolecular interactions are neglected, it is sufficient that the CO adsorbs almost exclusively at step-edges at low coverage (at 200 K the 0.05 eV corresponds to 3 kT). The emergence of the two TPD peaks on Cu(4 1 0) is therefore attributed to a combination of step-edge preference and lateral repulsion between CO molecules, which increases with increasing coverages and diminishes the net desorption energy of CO. DFT calculations further reveal that the reason for the significant increase of saturation coverage on Cu(4 1 0) compared to Cu(1 0 0) is related to the geometry of the step-edge that allows the CO molecules adsorbed thereon to tilt away from the nearest neighboring CO molecules adsorbed at the terrace and therefore to effectively reduce the lateral repulsion.

摘要

通过程序升温脱附(TPD)和密度泛函理论(DFT)计算研究了一氧化碳(CO)在阶梯状Cu(4 1 0)上的吸附。为作比较,还通过DFT计算对CO在Cu(1 0 0)上的吸附进行了表征。在Cu(4 1 0)上,TPD显示出两个脱附峰:高温峰(约210 K)归因于CO从台阶边缘位点的脱附,低温峰(约170 K)归因于从平台位点的脱附。根据DFT计算,CO更倾向于吸附在Cu(4 1 0)的台阶边缘,尽管在1/16 ML的低覆盖度下,台阶边缘与平台位点的偏好差异相当小,约为0.05 eV;DFT预测在台阶边缘和平台顶部位点的CO结合能分别为 -0.89和 -0.84 eV,而在Cu(1 0 0)顶部位点计算的值为 -0.86 eV。尽管台阶边缘相对于平台位点0.05 eV的这种小偏好无法解释两个TPD峰之间40 K的温差,但当忽略分子间横向相互作用时,在低覆盖度下CO几乎完全吸附在台阶边缘就足够了(在200 K时,0.05 eV相当于3kT)。因此,Cu(4 1 0)上两个TPD峰的出现归因于台阶边缘偏好和CO分子之间横向排斥的共同作用,这种排斥随着覆盖度的增加而增加,并降低了CO的净脱附能。DFT计算进一步表明,与Cu(1 0 0)相比,Cu(4 1 0)上饱和覆盖度显著增加的原因与台阶边缘的几何形状有关,这种几何形状使得吸附在其上的CO分子能够倾斜远离吸附在平台上的最近邻CO分子,从而有效降低横向排斥。

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