Dussan A, Bertel S D, Melo S F, Mesa F
Universidad Nacional de Colombia, Facultad de Ciencias, Departamento de Física, Grupo de Materiales Nanoestructutrados y sus Aplicaciones, Ciudad Universitaria, Bogotá, Colombia.
Universidad del Rosario, Facultad de Ciencias Naturales y Matemáticas, Grupo NanoTech, Bogotá, Colombia.
PLoS One. 2017 Mar 14;12(3):e0173118. doi: 10.1371/journal.pone.0173118. eCollection 2017.
In this work, porous-silicon samples were prepared by electrochemical etching on p-type (B-doped) Silicon (Si) wafers. Hydrofluoric acid (HF)-ethanol (C2H5OH) [HF:Et] and Hydrofluoric acid (HF)-dimethylformamide (DMF-C3H7NO) [HF:DMF] solution concentrations were varied between [1:2]-[1:3] and [1:7]-[1:9], respectively. Effects of synthesis parameters, like current density, solution concentrations, reaction time, on morphological properties were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements. Pore sizes varying from 20 nm to micrometers were obtained for long reaction times and [HF:Et] [1:2] concentrations; while pore sizes in the same order were observed for [HF:DMF] [1:7], but for shorter reaction time. Greater surface uniformity and pore distribution was obtained for a current density of around 8 mA/cm2 using solutions with DMF. A correlation between reflectance measurements and pore size is presented. The porous-silicon samples were used as substrate for hydroxyapatite growth by sol-gel method. X-ray diffraction (XRD) and SEM were used to characterize the layers grown. It was found that the layer topography obtained on PS samples was characterized by the evidence of Hydroxyapatite in the inter-pore regions and over the surface.
在本工作中，通过在p型（硼掺杂）硅（Si）晶片上进行电化学蚀刻制备了多孔硅样品。氢氟酸（HF）-乙醇（C₂H₅OH）[HF:Et]和氢氟酸（HF）-二甲基甲酰胺（DMF-C₃H₇NO）[HF:DMF]溶液浓度分别在[1:2]-[1:3]和[1:7]-[1:9]之间变化。通过扫描电子显微镜（SEM）和原子力显微镜（AFM）测量研究了合成参数（如电流密度、溶液浓度、反应时间）对形态学性质的影响。对于较长的反应时间和[HF:Et] [1:2]浓度，获得了从20纳米到微米不等的孔径；而对于[HF:DMF] [1:7]，在较短的反应时间内观察到了相同量级的孔径。使用含DMF的溶液，在电流密度约为8 mA/cm²时获得了更高的表面均匀性和孔分布。给出了反射率测量与孔径之间的相关性。多孔硅样品被用作通过溶胶-凝胶法生长羟基磷灰石的基底。使用X射线衍射（XRD）和SEM对生长的层进行了表征。发现在PS样品上获得的层形貌的特征是在孔间区域和表面有羟基磷灰石存在的证据。
