Electro-Thermal Model of Threshold Switching in TaO-Based Devices.

Pulsed and quasi-static current-voltage (I-V) characteristics of threshold switching in TiN/TaO/TiN crossbar devices were measured as a function of stage temperature (200-495 K) and oxygen flow during the deposition of TaO. A comparison of the pulsed and quasi-static characteristics in the high resistance part of the I-V revealed that Joule self-heating significantly affected the current and was a likely source of negative differential resistance (NDR) and thermal runaway. The experimental quasi-static I-V's were simulated using a finite element electro-thermal model that coupled current and heat flow and incorporated an external circuit with an appropriate load resistor. The simulation reproduced the experimental I-V including the OFF-state at low currents and the volatile NDR region. In the NDR region, the simulation predicted spontaneous current constriction forming a small-diameter hot conducting filament with a radius of 250 nm in a 6 μm diameter device.