Li Nanxi, Purnawirman P, Su Zhan, Salih Magden E, Callahan Patrick T, Shtyrkova Katia, Xin Ming, Ruocco Alfonso, Baiocco Christopher, Ippen Erich P, Kärtner Franz X, Bradley Jonathan D B, Vermeulen Diedrik, Watts Michael R
Opt Lett. 2017 Mar 15;42(6):1181-1184. doi: 10.1364/OL.42.001181.
Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.55 μm wavelength, while in the 2 μm region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated. In this Letter, we report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 and 387 mW, and slope efficiencies of 14% and 23%, respectively. More than 70 dB side-mode suppression ratio is achieved for both lasers. This work extends the applicability of silicon photonic microsystems in the 2 μm region.
中红外激光源在包括光探测与测距、光谱学、通信、痕量气体检测和医学传感等各种应用中具有极大的吸引力。硅光子学是一个很有前景的平台，它能够以低成本和紧凑尺寸将这些应用集成到单个芯片上。基于硅的高功率激光器已在1.55μm波长得到证明，而据我们所知，在2μm波段，高功率、高效率和单片光源的研究还很少。在本信函中，我们报告了具有单模输出功率分别高达267和387mW、斜率效率分别为14%和23%的高功率CMOS兼容掺铥分布反馈和分布布拉格反射激光器。两种激光器均实现了超过70dB的边模抑制比。这项工作扩展了硅光子微系统在2μm波段的适用性。
