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基于硅光子学平台的高功率铥激光器。

High-power thulium lasers on a silicon photonics platform.

作者信息

Li Nanxi, Purnawirman P, Su Zhan, Salih Magden E, Callahan Patrick T, Shtyrkova Katia, Xin Ming, Ruocco Alfonso, Baiocco Christopher, Ippen Erich P, Kärtner Franz X, Bradley Jonathan D B, Vermeulen Diedrik, Watts Michael R

出版信息

Opt Lett. 2017 Mar 15;42(6):1181-1184. doi: 10.1364/OL.42.001181.

Abstract

Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.55 μm wavelength, while in the 2 μm region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated. In this Letter, we report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 and 387 mW, and slope efficiencies of 14% and 23%, respectively. More than 70 dB side-mode suppression ratio is achieved for both lasers. This work extends the applicability of silicon photonic microsystems in the 2 μm region.

摘要

中红外激光源在包括光探测与测距、光谱学、通信、痕量气体检测和医学传感等各种应用中具有极大的吸引力。硅光子学是一个很有前景的平台,它能够以低成本和紧凑尺寸将这些应用集成到单个芯片上。基于硅的高功率激光器已在1.55μm波长得到证明,而据我们所知,在2μm波段,高功率、高效率和单片光源的研究还很少。在本信函中,我们报告了具有单模输出功率分别高达267和387mW、斜率效率分别为14%和23%的高功率CMOS兼容掺铥分布反馈和分布布拉格反射激光器。两种激光器均实现了超过70dB的边模抑制比。这项工作扩展了硅光子微系统在2μm波段的适用性。

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