State Key Laboratory of High Performance Ceramics and superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Dingxi, 1295, Changning, Shanghai, 200050, People's Republic of China. University of Chinese Academy of Sciences, Yuquan 19, Shijingshan, Beijing, 100049, People's Republic of China.
Nanotechnology. 2017 May 19;28(20):20LT02. doi: 10.1088/1361-6528/aa6707. Epub 2017 Mar 15.
Ultrathin Ni doped CoO films were prepared by direct current co-sputtering at room temperature as inorganic hole transport materials for inverted perovskite solar cells. P-type doping was designed to adjust the valence band position of CoO to match the that of CHNHPbI, which would effectively eliminate the interface barrier. Moreover, the hole extraction ability would be enhanced and the power conversion efficiency of the devices hence increased from 3.68% to 9.60%. The optimized performance was also accompanied by decent stability as a result of its intrinsic stability.
采用直流共溅射法在室温下制备了超薄掺镍 CoO 薄膜，将其作为无机电荷传输材料应用于倒置钙钛矿太阳能电池中。采用 p 型掺杂设计来调节 CoO 的价带位置以匹配 CHNHPbI，这将有效消除界面势垒。此外，空穴提取能力得到增强，器件的功率转换效率也从 3.68%提高到 9.60%。由于其内在的稳定性，优化后的性能还伴随着良好的稳定性。
