Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
Nanoscale. 2017 Mar 30;9(13):4388-4396. doi: 10.1039/c7nr00685c.
Carbon nanotube thin film transistors (CNT-TFTs) have been regarded as strong competitors to currently commercialized TFT technologies. Though much progress has been achieved recently, CNT-TFT research is still in the stage of laboratory research. One critical challenge for commercializing CNT-TFT technology is that the commonly used device fabrication method is a lift-off based process, which is not suitable for mass production. In this paper, we report an etching based fabrication process for CNT-TFTs, which is fully manufacturing compatible. In our process, the CNT thin film channel was patterned by dry etching, while wet etching was used for patterning the layers of metal and insulator. The CNT-TFTs were successfully fabricated on a 4 inch wafer in both top-gate and buried-gate geometries with low Schottky barrier contact and pretty uniform performance. High output current (>1.2 μA μm), high on/off current ratio (>10) and high mobility (>30 cm V s) were obtained. Though the fabrication process still needs to be optimized, we believe our research on the etching fabrication process pushes CNT-TFT technology a step forward towards real applications in the near future.
碳纳米管薄膜晶体管（CNT-TFT）被认为是目前商业化 TFT 技术的有力竞争者。尽管最近已经取得了很大的进展，但 CNT-TFT 的研究仍处于实验室研究阶段。将 CNT-TFT 技术商业化的一个关键挑战是，常用的器件制造方法是基于剥离的工艺，这不适用于大规模生产。在本文中，我们报告了一种基于刻蚀的 CNT-TFT 制造工艺，该工艺完全与制造兼容。在我们的工艺中，CNT 薄膜沟道通过干法刻蚀进行图案化，而湿法刻蚀用于图案化金属和绝缘体层。我们成功地在 4 英寸晶圆上制造了顶栅和埋栅结构的 CNT-TFT，具有低肖特基势垒接触和相当均匀的性能。获得了高输出电流（>1.2 μA μm）、高导通电流比（>10）和高迁移率（>30 cm V s）。虽然制造工艺仍需要优化，但我们相信我们对刻蚀制造工艺的研究将推动 CNT-TFT 技术在不久的将来朝着实际应用迈出一步。
