School of Chemistry and Chemical Engineering and ‡School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150001, PR China.
ACS Appl Mater Interfaces. 2017 Apr 5;9(13):11711-11720. doi: 10.1021/acsami.7b02609. Epub 2017 Mar 27.
Highly conductive and optical transparent Al-doped ZnO (AZO) thin film composed of ZnO with a Zn-Al-O interface was fabricated by thermal atomic layer deposition (ALD) method. The as-prepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature-sensitive flexible photoelectronic devices; film resistivity is as low as 5.7 × 10 Ω·cm, the carrier concentration is high up to 2.2 × 10 cm. optical transparency is greater than 80% in a visible range, and the growth temperature is below 150 °C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-AlO interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable threshold voltage and I/I ratio, showing promising for use in high-resolution, fully transparent, and flexible display applications.
由 ZnO 与 Zn-Al-O 界面组成的高导电和光学透明的掺铝氧化锌 (AZO) 薄膜是通过热原子层沉积 (ALD) 方法制备的。所制备的 AZO 薄膜具有优异的电学和光学性能，具有高稳定性和与温度敏感的柔性光电设备的兼容性；薄膜电阻率低至 5.7×10 Ω·cm，载流子浓度高达 2.2×10 cm。在可见光范围内的光学透明度大于 80%，在 PEN 衬底上的生长温度低于 150°C。与传统含有 ZnO-AlO 界面的 AZO 薄膜相比，我们提出电流 AZO 薄膜的增强电导率的潜在机制归因于 Zn-Al-O 界面中 Zn-O 和 Al-O 键的自由竞争生长模式导致的氧空位缺乏。基于该 AZO 电极的柔性透明晶体管表现出良好的阈值电压和 I/I 比，有望用于高分辨率、全透明和柔性显示应用。
