Wang Guangde, Zhang Xinyu, Jiang Wenlong, Wang Lizhong
College of Information & Technology, Jilin Normal University, Jilin Siping 136000, China.
J Nanosci Nanotechnol. 2018 Dec 1;18(12):8333-8336. doi: 10.1166/jnn.2018.16378.
The AZO transparent conductive films are prepared by the atomic layer deposition (ALD) at a low temperature of 150 °C. The different Al-Zn doping ratios were designed during the deposition. The phase structure of the films was characterized by XRD, the electrical properties of thin films were analyzed by the Holzer test, and the optical properties of thin films were analyzed by the UV-3600 (UV-VIS-NIR) spectrophotometer. The results showed that all the films preferred the orientation of the C axis during the growth process, the AZO films have a very low resistivity of 6.955×10-4 Ω·cm with the Al doping ratio by 2%, the deposition temperature is 150 °C and the thickness of the film is 200 nm. The transmission of AZO films with the different doping ratios in the visible region is 85%. The proper doping ratio can be selected to get the excellent photoelectric properties of AZO thin films. Such low resistivity AZO transparent conductive film is expected to replace the ITO as the transparent electrode for the organic light-emitting devices and the other new generation of the optoelectronic devices.
通过原子层沉积（ALD）在150℃的低温下制备AZO透明导电薄膜。在沉积过程中设计了不同的Al-Zn掺杂比。通过XRD对薄膜的相结构进行表征，通过霍尔测试分析薄膜的电学性能，通过UV-3600（UV-VIS-NIR）分光光度计分析薄膜的光学性能。结果表明，所有薄膜在生长过程中均择优沿C轴取向，Al掺杂比为2%、沉积温度为150℃、薄膜厚度为200nm时，AZO薄膜具有6.955×10-4Ω·cm的极低电阻率。不同掺杂比的AZO薄膜在可见光区域的透过率为85%。可以选择合适的掺杂比以获得AZO薄膜优异的光电性能。这种低电阻率的AZO透明导电薄膜有望替代ITO作为有机发光器件和其他新一代光电器件的透明电极。
