采用原子层沉积技术制备的双层沟道AZO/ZnO薄膜晶体管
Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.
作者信息
Li Huijin, Han Dedong, Liu Liqiao, Dong Junchen, Cui Guodong, Zhang Shengdong, Zhang Xing, Wang Yi
机构信息
Institute of Microelectronics, Peking University, 100871, Beijing, China.
Shenzhen Graduate School, Peking University, 518055, Shenzhen, China.
出版信息
Nanoscale Res Lett. 2017 Dec;12(1):223. doi: 10.1186/s11671-017-1999-7. Epub 2017 Mar 24.
This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O at 300 °C exhibit a low leakage current of 2.5 × 10A, I /I ratio of 1.4 × 10, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.
这封信展示了通过原子层沉积工艺在相对低温下制备的双层沟道铝掺杂氧化锌/氧化锌薄膜晶体管（AZO/ZnO TFTs）。还研究了在不同温度的氧气气氛中退火的影响。在300°C的干燥氧气中退火的ALD双层沟道AZO/ZnO TFTs表现出2.5×10A的低漏电流、1.4×10的I/I比、0.23 V/十倍频程的亚阈值摆幅（SS）以及高透射率。双层沟道AZO/ZnO TFT器件性能的增强是由于插入的AZO前沟道层起到了迁移率增强剂的作用。
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