Shpotyuk Yaroslav
Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskogo str., Lviv, 79017, Ukraine.
Center for Innovation and Transfer of Natural Sciences and Engineering Knowledge, Faculty of Mathematics and Natural Sciences, University of Rzeszow, 1, Pigonia str., 35-959, Rzeszow, Poland.
Nanoscale Res Lett. 2017 Dec;12(1):191. doi: 10.1186/s11671-017-1959-2. Epub 2017 Mar 14.
Subsequent stages of atomic-deficient nanostructurization finalizing rare-earth functionality under Pr-doping in Ga(AsSbSe) glass are studied employing method of positron annihilation lifetime spectroscopy. Genesis of free-volume positron trapping sites, composed of atomic-accessible geometrical holes (void cores) arrested by surrounding atomic-inaccessible Se-based bond-free solid angles (void shells), are disclosed for parent AsSe, Ga-codoped Ga(AsSe), as well as Ga-codoped and Sb-modified Ga(AsSbSe) glasses. The finalizing nanostructurization due to Pr-doping (500 wppm) in glassy Ga(AsSbSe) is explained in terms of competitive contribution of changed occupancy sites available for both rare-earth ions and positrons.
采用正电子湮没寿命谱方法研究了在Ga(AsSbSe)玻璃中Pr掺杂下实现稀土功能的原子缺陷纳米结构化的后续阶段。揭示了自由体积正电子俘获位点的起源，这些位点由被周围原子不可达的基于Se的无键立体角（空穴壳）捕获的原子可达几何空穴（空穴核）组成，适用于母体AsSe、Ga共掺杂的Ga(AsSe)以及Ga共掺杂和Sb改性的Ga(AsSbSe)玻璃。玻璃态Ga(AsSbSe)中Pr掺杂（500 wppm）导致的最终纳米结构化是根据稀土离子和正电子可用的占据位点变化的竞争贡献来解释的。
