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分时双忆阻器交叉阵列将阵列数量减半用于模式识别。

Time-Shared Twin Memristor Crossbar Reducing the Number of Arrays by Half for Pattern Recognition.

作者信息

Ngoc Truong Son, Van Pham Khoa, Yang Wonsun, Jo Anjae, Lee Mi Jung, Mo Hyun-Sun, Min Kyeong-Sik

机构信息

School of Electrical Engineering, Kookmin University, Seoul, Korea.

School of Advanced Materials Engineering, Kookmin University, Seoul, Korea.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):205. doi: 10.1186/s11671-017-1973-4. Epub 2017 Mar 21.

DOI:10.1186/s11671-017-1973-4
PMID:28325037
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5359198/
Abstract

In this paper, we propose a new time-shared twin memristor crossbar for pattern-recognition applications. By sharing two memristor arrays at different time, the number of memristor arrays can be reduced by half, saving the crossbar area by half, too. To implement the time-shared twin memristor crossbar, we also propose CMOS time-shared subtractor circuit, in this paper. The operation of the time-shared twin memristor crossbar is verified using 3 × 3 memristor array which is made of aluminum film and carbon fiber. Here, the crossbar array is programmed to store three different patterns. When we apply three different input vectors to the array, we can verify that the input vectors are well recognized by the proposed crossbar. Moreover, the proposed crossbar is tested for the recognition of complicated gray-scale images. Here, 10 images with 32 × 32 pixels are applied to the proposed crossbar. The simulation result verifies that the input images are recognized well by the proposed crossbar, even though the noise level of each image is varied from -10 to +10 dB.

摘要

在本文中,我们提出了一种用于模式识别应用的新型分时双忆阻器交叉开关。通过在不同时间共享两个忆阻器阵列,忆阻器阵列的数量可以减少一半,交叉开关面积也能节省一半。为了实现分时双忆阻器交叉开关,我们在本文中还提出了CMOS分时减法器电路。使用由铝膜和碳纤维制成的3×3忆阻器阵列验证了分时双忆阻器交叉开关的操作。在此,交叉开关阵列被编程存储三种不同的模式。当我们将三个不同的输入向量应用于该阵列时,可以验证所提出的交叉开关能够很好地识别输入向量。此外,对所提出的交叉开关进行了复杂灰度图像识别测试。在此,将10幅32×32像素的图像应用于所提出的交叉开关。仿真结果验证了即使每幅图像的噪声水平在-10至+10dB之间变化,所提出的交叉开关仍能很好地识别输入图像。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/a0c13c4f90d7/11671_2017_1973_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/650475750893/11671_2017_1973_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/b21eef42b595/11671_2017_1973_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/a86208804e28/11671_2017_1973_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/cc244deaf70f/11671_2017_1973_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/a0c13c4f90d7/11671_2017_1973_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/650475750893/11671_2017_1973_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/b21eef42b595/11671_2017_1973_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/a86208804e28/11671_2017_1973_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/cc244deaf70f/11671_2017_1973_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9406/5359198/a0c13c4f90d7/11671_2017_1973_Fig5_HTML.jpg

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引用本文的文献

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本文引用的文献

1
Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition.二进制纳米尺度忆阻器互补交叉与双叉交叉的模式识别统计变化容限比较研究。
Nanoscale Res Lett. 2015 Dec;10(1):405. doi: 10.1186/s11671-015-1106-x. Epub 2015 Oct 16.
2
Training and operation of an integrated neuromorphic network based on metal-oxide memristors.基于金属氧化物忆阻器的集成神经形态网络的训练和操作。
Nature. 2015 May 7;521(7550):61-4. doi: 10.1038/nature14441.
3
Neuromorphic crossbar circuit with nanoscale filamentary-switching binary memristors for speech recognition.
用于语音识别的具有纳米级丝状开关二元忆阻器的神经形态交叉开关电路
Nanoscale Res Lett. 2014 Nov 23;9(1):629. doi: 10.1186/1556-276X-9-629. eCollection 2014.
4
Pattern classification by memristive crossbar circuits using ex situ and in situ training.基于原位和异位训练的忆阻器交叉阵列电路的模式分类。
Nat Commun. 2013;4:2072. doi: 10.1038/ncomms3072.