Le Minh, Truong Son Ngoc
Faculty of Electrical and Electronics Engineering, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 70000, Vietnam.
Micromachines (Basel). 2023 Oct 27;14(11):1990. doi: 10.3390/mi14111990.
Binary memristor crossbars have great potential for use in brain-inspired neuromorphic computing. The complementary crossbar array has been proposed to perform the Exclusive-NOR function for neuromorphic pattern recognition. The single crossbar obtained by shortening the Exclusive-NOR function has more advantages in terms of power consumption, area occupancy, and fault tolerance. In this paper, we present the impact of data density on the single memristor crossbar architecture for neuromorphic image recognition. The impact of data density on the single memristor architecture is mathematically derived from the reduced formula of the Exclusive-NOR function, and then verified via circuit simulation. The complementary and single crossbar architectures are tested by using ten 32 × 32 images with different data densities of 0.25, 0.5, and 0.75. The simulation results showed that the data density of images has a negative effect on the single memristor crossbar architecture while not affecting the complementary memristor crossbar architecture. The maximum output column current produced by the single memristor crossbar array decreases as data density decreases while the complementary memristor crossbar array architecture provides stable maximum output column currents. When recognizing images with data density as low as 0.25, the maximum output column currents of the single memristor crossbar architecture is reduced four-fold compared with the maximum currents from the complementary memristor crossbar architecture. This reduction causes the Winner-take-all circuit to work incorrectly and will reduce the recognition rate of the single memristor crossbar architecture. These simulation results show that the single memristor crossbar architecture has more advantages compared with the complementary crossbar architecture when the images do have not many different densities, and none of the images have very low densities. This work also indicates that the single crossbar architecture must be improved by adding a constant term to deal with images that have low data densities. These are valuable case studies for archiving the advantages of single memristor crossbar architecture in neuromorphic computing applications.
二元忆阻器交叉阵列在受大脑启发的神经形态计算中具有巨大的应用潜力。互补交叉阵列已被提出用于执行神经形态模式识别中的异或非功能。通过简化异或非功能得到的单交叉阵列在功耗、面积占用和容错方面具有更多优势。在本文中,我们展示了数据密度对用于神经形态图像识别的单忆阻器交叉阵列架构的影响。数据密度对单忆阻器架构的影响是从异或非功能的简化公式中数学推导出来的,然后通过电路仿真进行验证。互补和单交叉阵列架构通过使用十张32×32的图像进行测试,这些图像具有0.25、0.5和0.75的不同数据密度。仿真结果表明,图像的数据密度对单忆阻器交叉阵列架构有负面影响,而对互补忆阻器交叉阵列架构没有影响。单忆阻器交叉阵列产生的最大输出列电流随着数据密度的降低而减小,而互补忆阻器交叉阵列架构提供稳定的最大输出列电流。当识别数据密度低至0.25的图像时,单忆阻器交叉阵列架构的最大输出列电流与互补忆阻器交叉阵列架构的最大电流相比降低了四倍。这种降低导致胜者全得电路工作异常,并会降低单忆阻器交叉阵列架构 的识别率。这些仿真结果表明,当图像没有许多不同密度且没有图像具有非常低密度时,单忆阻器交叉阵列架构比互补交叉阵列架构具有更多优势。这项工作还表明,必须通过添加常数项来改进单交叉阵列架构,以处理具有低数据密度的图像。这些是记录单忆阻器交叉阵列架构在神经形态计算应用中的优势的有价值的案例研究。