Kim Tae-Hee, Choi Sooseok, Park Dong-Wha
Department of Chemistry and Chemical Engineering and Regional Innovation Center for Environmental Technology of Thermal Plasma (RIC-ETTP), Inha University, 100 Inha-ro, Nam-gu, Incheon 22212, Korea.
Department of Nuclear and Energy Engineering, Jeju National University, 102 Jejudaehak-ro, Jeju 63243, Korea.
Nanomaterials (Basel). 2016 Feb 24;6(3):38. doi: 10.3390/nano6030038.
Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO₃)₃∙H₂O) was used as a raw material and NH₃ gas was used as a nitridation source. Additionally, melamine (C₃H₆N₆) powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga₂O₃). Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal plasma has low crystallinity and purity. It was improved to relatively high crystallinity and purity by annealing. The crystallinity is enhanced by the thermal treatment and the purity was increased by the elimination of residual C₃H₆N₆. The combined process of thermal plasma and annealing was appropriate for synthesizing crystalline GaN nanopowder. The annealing process after the plasma synthesis of GaN nanopowder eliminated residual contamination and enhanced the crystallinity of GaN nanopowder. As a result, crystalline GaN nanopowder which has an average particle size of 30 nm was synthesized by the combination of thermal plasma treatment and annealing.
采用直流（DC）非转移弧等离子体合成了用作蓝色荧光材料的氮化镓（GaN）纳米粉末。以硝酸镓水合物（Ga(NO₃)₃∙H₂O）为原料，NH₃气体作为氮化源。此外，将三聚氰胺（C₃H₆N₆）粉末注入等离子体火焰中以防止镓氧化为氧化镓（Ga₂O₃）。采用氩热等离子体合成GaN纳米粉末。通过热等离子体合成的GaN纳米粉末结晶度和纯度较低。通过退火将其提高到相对较高的结晶度和纯度。通过热处理提高了结晶度，通过去除残留的C₃H₆N₆提高了纯度。热等离子体和退火的组合工艺适合于合成结晶GaN纳米粉末。在等离子体合成GaN纳米粉末后进行的退火工艺消除了残留污染并提高了GaN纳米粉末的结晶度。结果，通过热等离子体处理和退火的组合合成了平均粒径为30 nm的结晶GaN纳米粉末。
