Li Jianye, An Lei, Lu Chenguang, Liu Jie
Department of Chemistry, Duke University, Durham, North Carolina 27708, USA.
Nano Lett. 2006 Feb;6(2):148-52. doi: 10.1021/nl051265k.
We have observed that the hexagonal GaN nanowires grown from a simple chemical vapor deposition method using gallium metal and ammonia gas are usually gallium-doped. By annealing in air, the gallium-doped hexagonal GaN nanowires could be completely converted to beta-Ga(2)O(3) nanowires. Annealing the beta-Ga(2)O(3) nanowires in ammonia could convert them back to undoped hexagonal GaN nanowires. Field effect transistors based on these three kinds of nanowires were fabricated, and their performances were studied. Because of gallium doping, the as-grown GaN nanowires show a weak gating effect. Through the conversion process of GaN nanowires (gallium-doped) --> Ga(2)O(3) nanowires --> GaN nanowires (undoped) via annealing, the final undoped GaN nanowires display different electrical properties than the initial gallium-doped GaN nanowires, show a pronounced n-type gating effect, and can be completely turned off.
我们观察到，通过使用金属镓和氨气的简单化学气相沉积法生长的六方氮化镓纳米线通常是掺镓的。通过在空气中退火，掺镓的六方氮化镓纳米线可以完全转化为β-Ga₂O₃纳米线。在氨气中对β-Ga₂O₃纳米线进行退火可以将它们重新转化为未掺杂的六方氮化镓纳米线。基于这三种纳米线制造了场效应晶体管，并研究了它们的性能。由于镓掺杂，生长态的氮化镓纳米线显示出较弱的栅极效应。通过退火使氮化镓纳米线（掺镓）→Ga₂O₃纳米线→氮化镓纳米线（未掺杂）的转化过程，最终的未掺杂氮化镓纳米线表现出与初始掺镓氮化镓纳米线不同的电学性质，显示出明显的n型栅极效应，并且可以完全关闭。
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