Department of Physics, Pukyong National University , Busan 608-737, South Korea.
Hybrid Interface Materials Global Frontier Research Group, Pusan National University , Busan 608-737, South Korea.
ACS Appl Mater Interfaces. 2017 Apr 12;9(14):12382-12390. doi: 10.1021/acsami.6b16541. Epub 2017 Mar 31.
We report a simple, low cost, and quite effective method for achieving single-crystal-like CHNHPbI perovskite leading to a significant enhancement in the performance and stability of inverted planar perovskite solar cells (IPSCs). By employing a merged annealing method during the fabrication of an IPSC for preparing the perovskite CHNHPbI film, we remarkably increase the crystallinity of the CHNHPbI film and enhance the device performance and stability. An IPSC with the indium tin oxide/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)/CHNHPbI (active layer)/[6,6]-phenyl-C-butyric acid methyl ester/Al structure was fabricated using the merged annealing method and exhibited significantly enhanced performance with a high power conversion efficiency of 18.27% and a fill factor of 81.34%. Moreover, since two separate annealing processes are merged in the proposed annealing method, the fabrication step becomes much simpler and easier, leading to a reduction in fabrication costs.
我们报告了一种简单、低成本且非常有效的方法，可实现类似单晶的 CHNHPbI 钙钛矿，从而显著提高倒置平面钙钛矿太阳能电池（IPSCs）的性能和稳定性。通过在制备 IPSC 时采用合并退火方法来制备钙钛矿 CHNHPbI 薄膜，我们显著提高了 CHNHPbI 薄膜的结晶度，并增强了器件性能和稳定性。采用合并退火方法制备了具有氧化铟锡/聚（3,4-乙二氧基噻吩）-聚（苯乙烯磺酸盐）/CHNHPbI（活性层）/[6,6]-苯基-C-丁酸甲酯/Al 结构的 IPSC，其性能得到了显著提高，具有 18.27%的高光能量转换效率和 81.34%的填充因子。此外，由于在提出的退火方法中合并了两个单独的退火过程，因此制造步骤变得更加简单和容易，从而降低了制造成本。
