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具有电子修饰芳基异腈辅助配体的双环金属化铱配合物。

Bis-cyclometalated iridium complexes with electronically modified aryl isocyanide ancillary ligands.

作者信息

Na Hanah, Maity Ayan, Teets Thomas S

机构信息

Department of Chemistry, University of Houston, 3585 Cullen Blvd. Room 112, Houston, TX 77204-5003, USA.

出版信息

Dalton Trans. 2017 Apr 11;46(15):5008-5016. doi: 10.1039/c7dt00694b.

Abstract

In this work we report a study on the effect of systematic ancillary ligand modifications on electrochemical and photophysical properties of cationic biscyclometalated bis(arylisocyanide)iridium(iii) complexes. Nine new Ir(iii) complexes were synthesized using three different cyclometalating (C^N) ligands (2,4-difluorophenylpyridine (Fppy), 2-benzothienylpyridine (btp), and 2-phenylbenzothiazole (bt)) with three aryl isocyanide ancillary ligands (2,4-dimethoxyphenyl isocyanide (CNAr), 3,5-bis(trifluoromethyl)phenyl isocyanide (CNAr) and 4-nitrophenyl isocyanide (CNAr)). Systematic modifications of ancillary ligands with electron-donating or electron-withdrawing groups have a very minor influence on the positions of the absorption and emission bands, suggesting that aryl isocyanide ancillary ligands minimally perturb the primarily ligand-centered emissive states, but still can control the dynamics of the excited state. Replacing electron-donating groups with electron-withdrawing group influences k and/or k, resulting in changes in the lifetimes and quantum yields. In addition, we reveal that electronic structures can be substantially altered by incorporating electron-donating or electron-withdrawing groups on the aryl isocyanide ancillary ligand, with different magnitudes of the perturbation depending on the cyclometalating C^N ligand. Particularly, the formally Ir/Ir oxidation couple can be perturbed by over 200 mV when electron-donating substituents are replaced with electron-withdrawing groups.

摘要

在本工作中,我们报道了一项关于系统性辅助配体修饰对阳离子双环金属化双(芳基异腈)铱(III)配合物的电化学和光物理性质影响的研究。使用三种不同的环金属化(C^N)配体(2,4 - 二氟苯基吡啶(Fppy)、2 - 苯并噻吩基吡啶(btp)和2 - 苯基苯并噻唑(bt))与三种芳基异腈辅助配体(2,4 - 二甲氧基苯基异腈(CNAr)、3,5 - 双(三氟甲基)苯基异腈(CNAr)和4 - 硝基苯基异腈(CNAr))合成了九种新型铱(III)配合物。用供电子或吸电子基团对辅助配体进行系统性修饰对吸收和发射带的位置影响非常小,这表明芳基异腈辅助配体对主要以配体为中心的发射态干扰最小,但仍能控制激发态的动力学。用吸电子基团取代供电子基团会影响k和/或k,导致寿命和量子产率发生变化。此外,我们发现通过在芳基异腈辅助配体上引入供电子或吸电子基团可显著改变电子结构,其干扰程度因环金属化C^N配体而异。特别是,当用吸电子基团取代供电子取代基时,形式上的Ir/Ir氧化对可被扰动超过200 mV。

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