Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, United States of America. CNRS, GT UMI 2958, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz, France.
Nanotechnology. 2017 May 12;28(19):195304. doi: 10.1088/1361-6528/aa6a43. Epub 2017 Mar 30.
Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.
本文报道了在 GaN 覆盖 ZnO/c-蓝宝石上通过金属有机气相外延法进行纳米选择性区域生长（NSAG），成功合成了高质量的 InGaN 纳米金字塔。在 ZnO 外延低温 GaN 上生长的纳米金字塔均匀且呈现单晶形态，没有位错和 V 型坑。它们也富含铟（具有均匀的 22%的铟掺入）且相对较厚（100nm）。这些特性使它们在结晶度、质量、形态、化学成分和厚度方面与在 GaN 和 AlN/Si 模板上生长的纳米结构相当。此外，选择性地去除 ZnO 的能力允许将 InGaN/GaN 纳米金字塔潜在地剥离并转移到替代衬底上，例如更便宜和/或更灵活的衬底。这项技术为在 AlN/Si 上进行 NSAG 提供了一种有吸引力的替代方案，是制造适合廉价、灵活和可调谐发光二极管的高质量、厚且富含铟的 InGaN 单晶的平台。
