与ZnO晶格匹配的m面InGaN的脉冲溅射外延生长。

Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO.

作者信息

Kobayashi Atsushi, Ohta Jitsuo, Fujioka Hiroshi

机构信息

Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505, Japan.

PRESTO, Japan Science and Technology Agency, Saitama, 332-0012, Japan.

出版信息

Sci Rep. 2017 Oct 9;7(1):12820. doi: 10.1038/s41598-017-12518-w.

DOI:10.1038/s41598-017-12518-w

PMID:28993638

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5634446/

Abstract

m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO lies between 25 and 62 nm, whereas 180-nm-thick m-plane InGaN can be coherently grown on ZnO substrates, which is explained well by theoretical calculations based on an energy-balance model. The coherently grown m-plane InGaN on ZnO exhibited narrow X-ray rocking curves compared with the m-plane GaN grown on ZnO. These results demonstrate the benefit of lattice-matched ZnO substrates for epitaxy of high-quality nonpolar InGaN films.

摘要

通过脉冲溅射沉积在约350 °C的温度下在m面ZnO衬底上生长m面GaN和InGaN薄膜。研究发现，在ZnO上生长的m面GaN薄膜的临界厚度在25至62 nm之间，而180 nm厚的m面InGaN可以在ZnO衬底上实现相干生长，基于能量平衡模型的理论计算很好地解释了这一现象。与在ZnO上生长的m面GaN相比，在ZnO上相干生长的m面InGaN表现出更窄的X射线摇摆曲线。这些结果证明了晶格匹配的ZnO衬底对于高质量非极性InGaN薄膜外延生长的益处。