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基于 MoS 的共面神经元晶体管,可用于逻辑应用。

A MoS-based coplanar neuron transistor for logic applications.

机构信息

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China.

出版信息

Nanotechnology. 2017 May 26;28(21):214001. doi: 10.1088/1361-6528/aa6b47. Epub 2017 Apr 4.

Abstract

The human brain is an extremely complex system of 10-10 neurons. To construct brain-like neuromorphic hardware, the neuron unit should be implemented effectively. Here, we report a neuron transistor based on a MoS flake, which has summation and threshold functions similar to biological neurons and may act as a basic neuron unit in neuromorphic hardware. The neuron transistor is composed of a floating gate and two control gates. A heavily doped silicon substrate serves as the floating gate, while the two control gates are capacitively coupled with the floating gate. The neuron transistor can be well controlled by the two control gates individually or simultaneously. The drain current can be modulated by the input voltages at the control gates. While the current response of the neuron transistor has a large dependence on the magnitude of the input signal, it shows little dependence on the frequency of the input signal. To demonstrate the potential neuromorphic application of the neuron transistor, functions including abacus-like function, AND logic and OR logic are realized in the neuron transistor.

摘要

人类大脑是一个由 10-10 个神经元组成的极其复杂的系统。为了构建类似大脑的神经形态硬件,需要有效地实现神经元单元。在这里,我们报告了一种基于 MoS 薄片的神经元晶体管,它具有类似于生物神经元的求和与阈值功能,可能作为神经形态硬件中的基本神经元单元。神经元晶体管由浮栅和两个控制栅极组成。重掺杂的硅衬底用作浮栅,而两个控制栅极与浮栅电容耦合。神经元晶体管可以通过两个控制栅极单独或同时进行良好的控制。栅极的输入电压可以调节漏极电流。虽然神经元晶体管的电流响应对输入信号的幅度有很大的依赖性,但对输入信号的频率依赖性很小。为了展示神经元晶体管的潜在神经形态应用,我们在神经元晶体管中实现了包括算盘功能、AND 逻辑和 OR 逻辑等功能。

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