Roh Jeongkyun, Lee Taesoo, Kang Chan-Mo, Kwak Jeonghun, Lang Philippe, Horowitz Gilles, Kim Hyeok, Lee Changhee
Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea.
IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Deajeon, Korea.
Sci Rep. 2017 Apr 12;7:46365. doi: 10.1038/srep46365.
We demonstrated modulation of charge carrier densities in all-solution-processed organic field-effect transistors (OFETs) by modifying the injection properties with self-assembled monolayers (SAMs). The all-solution-processed OFETs based on an n-type polymer with inkjet-printed Ag electrodes were fabricated as a test platform, and the injection properties were modified by the SAMs. Two types of SAMs with different dipole direction, thiophenol (TP) and pentafluorobenzene thiol (PFBT) were employed, modifying the work function of the inkjet-printed Ag (4.9 eV) to 4.66 eV and 5.24 eV with TP and PFBT treatments, respectively. The charge carrier densities were controlled by the SAM treatment in both dominant and non-dominant carrier-channel regimes. This work demonstrates that control of the charge carrier densities can be efficiently achieved by modifying the injection property with SAM treatment; thus, this approach can achieve polarity conversion of the OFETs.
我们通过用自组装单分子层(SAMs)改变注入特性,证明了在全溶液处理的有机场效应晶体管(OFETs)中对载流子密度的调制。基于具有喷墨打印银电极的n型聚合物的全溶液处理OFETs被制作为测试平台,并且注入特性通过SAMs进行了改变。采用了两种具有不同偶极方向的SAMs,即苯硫酚(TP)和五氟苯硫醇(PFBT),分别通过TP和PFBT处理将喷墨打印银(4.9 eV)的功函数改变为4.66 eV和5.24 eV。在主导和非主导载流子通道区域中,载流子密度都通过SAM处理得到了控制。这项工作表明,通过用SAM处理改变注入特性可以有效地实现对载流子密度的控制;因此,这种方法可以实现OFETs的极性转换。