Xu Yong, Liu Chuan, Khim Dongyoon, Noh Yong-Young
Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, Republic of Korea.
Phys Chem Chem Phys. 2015 Oct 28;17(40):26553-74. doi: 10.1039/c4cp02413c.
Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.
有机电子学被视为未来微电子学的一个重要分支，特别适用于大面积、柔性、透明和绿色器件，其低成本是一个关键优势。有机场效应晶体管（OFET）作为众多预期应用的主要构建模块，已得到深入研究，并且最近取得了相当大的进展。然而，使用印刷技术实现高性能OFET和集成电路（IC）仍存在许多挑战。因此，在这篇观点文章中，我们研究了开发高性能印刷OFET和IC的主要问题，并寻求进一步改进的策略。与文献中许多其他涉及有机半导体（OSC）、印刷技术和器件物理的研究不同，我们的研究首先详细考察了OFET的性能参数（例如，载流子迁移率、阈值电压和接触电阻），通过这些参数来审视性能发展方面的相关挑战和潜在解决方案。在牢记对器件性能的全面理解的同时，我们逐一检查印刷OFET的组件，并探索在器件物理、材料工程、加工工艺和印刷技术方面提高性能的可能性。最后，我们分析了各种有机IC的性能，并讨论了优化OFET特性从而开发适用于广泛实际应用的高性能印刷IC的方法。
