高铜汞合金的研究。IV. 高铜分散型汞合金基质中η Cu-Sn（Cu6Sn5）晶体的形成

A study of high copper amalgams. IV. Formation of eta Cu-Sn (Cu6Sn5) crystals in a high copper dispersant amalgam matrix.

作者信息

Okabe T, Mitchell R J, Fairhurst C W

出版信息

J Dent Res. 1979 Mar;58(3):1087-92. doi: 10.1177/00220345790580031001.

DOI:10.1177/00220345790580031001

Abstract

In an HCD amalgam, eta Cu-Sn crystals were found dispersed within gamma1 matrix areas. Previously, eta Cu-Sn phase was thought to form only as part of a reaction zone surrounding Ag-Cu dispersant particles. The eta Cu-Sn crystals found in matrix areas of this HCD amalgam are smaller and more widely scattered than eta Cu-Sn crystals dispersed in the gamma1 matrix of HCSC amalgams.

摘要

在一种高铜牙科汞合金中，发现η Cu-Sn晶体分散在γ1基体区域内。此前，人们认为η Cu-Sn相仅作为围绕Ag-Cu分散颗粒的反应区的一部分形成。在这种高铜牙科汞合金基体区域中发现的η Cu-Sn晶体比分散在高铜银锡钴汞合金γ1基体中的η Cu-Sn晶体更小且分布更广泛。